Carrier collection efficiency of Schottky diodes on triode dc sputtered hydrogenated amorphous silicon: Transport properties of holes

1984 ◽  
Vol 56 (10) ◽  
pp. 2806-2811 ◽  
Author(s):  
E. Arene ◽  
J. Baixeras ◽  
D. Mencaraglia
Keyword(s):  
Amorphous Silicon ◽  
Transport Properties ◽  
Collection Efficiency ◽  
Schottky Diodes ◽  
Hydrogenated Amorphous Silicon ◽  
Carrier Collection ◽  
Hydrogenated Amorphous

Electronic and transport properties of hydrogenated amorphous silicon

1985 ◽  
Vol 31 (4) ◽  
pp. 2410-2415 ◽  
Author(s):  
A. D. Zdetsis ◽  
E. N. Economou ◽  
D. A. Papaconstantopoulos ◽  
and N. Flytzanis
Keyword(s):  
Amorphous Silicon ◽  
Transport Properties ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

scholarly journals Fabrication of a Hydrogenated Amorphous Silicon detector in 3-D Geometry and Preliminary Test on Planar Prototypes

2021 ◽  
Author(s):  
Mauro Menichelli ◽  
Marco Bizzarri ◽  
Maurizio Boscardin ◽  
Mirco Caprai ◽  
Anna Paola Caricato ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Leakage Current ◽  
Collection Efficiency ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapour ◽  
Silicon Detector ◽  
Preliminary Test ◽  
X Rays ◽  
Charge Collection Efficiency ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapour deposition (PECVD) of SiH4 (Silane) mixed with Hydrogen. The resulting material shows outstanding radiation resistance properties and can be deposited on a wide variety of different substrates. These devices have been used to detect many different kinds of radiation namely: MIPs, x-rays, neutrons and ions as well as low energy protons and alphas. However, MIP detection using planar diodes has always been difficult due to the unsatisfactory S/N ratio arising from a combination of high leakage current, high capacitance and a limited charge collection efficiency (50% at best for a 30 µm planar diode). To overcome these limitations the 3D-SiAm collaboration proposes to use a 3D detector geometry. The use of vertical electrodes allows for a small collection distance to be maintained while conserving a large detector thickness for charge generation. The depletion voltage in this configuration can be kept below 400 V with consequent reduction in the leakage current. In this paper, following a detailed description of the fabrication process, the results of the tests performed on the planar p-i-n structures made with ion implantation of the dopants and with carrier selective contacts will be illustrated.

Effects of microstructure on transport properties of undoped hydrogenated amorphous silicon films

1993 ◽  
Vol 63 (7) ◽  
pp. 955-957 ◽  
Author(s):  
R. M. A. Dawson ◽  
C. M. Fortmann ◽  
M. Gunes ◽  
Y. M. Li ◽  
S. S. Nag ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Transport Properties ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hydrogenated Amorphous

Electronic Transport Properties of Hydrogenated Amorphous Silicon Thin Films Deposited on Plastic Substrates

2011 ◽  
Vol 221 ◽  
pp. 189-193
Author(s):  
Ying Ge Li ◽  
Dong Xing Du
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Transport Properties ◽  
Electronic Transport ◽  
Hydrogenated Amorphous Silicon ◽  
Plastic Substrates ◽  
Electronic Transport Properties ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous

Aiming for potential application in flexible solar cells, electronic transport properties are studied for hydrogenated amorphous silicon thin films on plastic substrates. Intrinsic hydrogenated amorphous silicon layers are deposited on Kapton and Upilex-s polyimide substrates at temperatures of 100°C and 180°C by plasma enhanced chemical vapor deposition (PECVD) system. Layers on 75μm and 125 thick Kapton and on 125 Upilex-s substrates are characterized by dark conductivity and activation energy measurements. It can be concluded that the intrinsic layer on 125μm thick Kapton and Upilex-s plastic both have favorable electrical properties and therefore could be employed as substrate material for flexible solar cells.

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