Contribution of the spreading resistance to high‐frequency rectification in metal‐metal point contacts

1984 ◽  
Vol 55 (4) ◽  
pp. 1003-1011 ◽  
Author(s):  
R. W. van der Heijden ◽  
H. M. Swartjes ◽  
P. Wyder
1980 ◽  
Vol 37 (2) ◽  
pp. 245-248 ◽  
Author(s):  
R. W. van der Heijden ◽  
A. G. M. Jansen ◽  
J. H. M. Stoelinga ◽  
H. M. Swartjes ◽  
P. Wyder

1972 ◽  
Vol 43 (7) ◽  
pp. 3174-3183 ◽  
Author(s):  
H. Kanter ◽  
F. L. Vernon

Author(s):  
R. J. G. Goossens ◽  
J. I. Dijkhuis ◽  
H. W. de Wijn ◽  
A. G. M. Jansen ◽  
P. Wyder

2014 ◽  
Vol 35 (4) ◽  
pp. 425-427 ◽  
Author(s):  
Josue Sanz-Robinson ◽  
Warren Rieutort-Louis ◽  
Yingzhe Hu ◽  
Liechao Huang ◽  
Naveen Verma ◽  
...  

1989 ◽  
Vol 39 (17) ◽  
pp. 12560-12564 ◽  
Author(s):  
A. A. Lysykh ◽  
A. M. Duif ◽  
A. G. M. Jansen ◽  
P. Wyder

2020 ◽  
Vol 6 (13) ◽  
pp. eaay2497 ◽  
Author(s):  
Hiroki Isobe ◽  
Su-Yang Xu ◽  
Liang Fu

Rectification is a process that converts electromagnetic fields into a direct current. Such a process underlies a wide range of technologies such as wireless communication, wireless charging, energy harvesting, and infrared detection. Existing rectifiers are mostly based on semiconductor diodes, with limited applicability to small-voltage or high-frequency inputs. Here, we present an alternative approach to current rectification that uses the intrinsic electronic properties of quantum crystals without using semiconductor junctions. We identify a previously unknown mechanism for rectification from skew scattering due to the inherent chirality of itinerant electrons in time-reversal invariant but inversion-breaking materials. Our calculations reveal large, tunable rectification effects in graphene multilayers and transition metal dichalcogenides. Our work demonstrates the possibility of realizing high-frequency rectifiers by rational material design and quantum wave function engineering.


Sign in / Sign up

Export Citation Format

Share Document