60Co γ‐ray and electron irradiation damage of GaAs single crystals and solar cells

1983 ◽  
Vol 54 (9) ◽  
pp. 5021-5029 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Chikara Amano
1984 ◽  
Vol 23 (Part 1, No. 3) ◽  
pp. 302-307 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Chikao Uemura ◽  
Akio Yamamoto ◽  
Atsushi Shibukawa

1974 ◽  
Vol 21 (4) ◽  
pp. 229-234 ◽  
Author(s):  
M. Biget ◽  
P. Vajda ◽  
A. Lucasson ◽  
P. Lucasson

1983 ◽  
Vol 22 (Part 1, No. 11) ◽  
pp. 1727-1733 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Akio Yamamoto ◽  
Atsushi Shibukawa

1989 ◽  
Vol 115 (1-3) ◽  
pp. 63-65 ◽  
Author(s):  
Ulrich Schneider ◽  
Bernd Schröder ◽  
Peter Lechner

2007 ◽  
Vol 90 (23) ◽  
pp. 233111 ◽  
Author(s):  
Aurangzeb Khan ◽  
A. Freundlich ◽  
Jihua Gou ◽  
A. Gapud ◽  
M. Imazumi ◽  
...  

1996 ◽  
Vol 442 ◽  
Author(s):  
O.V. Astafiev ◽  
V.P. Kalinushkin ◽  
N.V. Abrosimov

AbstractMapping Low Angle Light Scattering method (MLALS) is proposed to study defect structure in materials used for solar cell production. Several types of defects are observed in Czochralski Si1−xGex (0.022<x<0.047) single crystals. Recombination activity of these defects is investigated. The possibility of contactless visualisation of grain boundary recombination in polysilicon is also demonstrated.


1991 ◽  
Vol 179-181 ◽  
pp. 526-528 ◽  
Author(s):  
Jiguang Sun ◽  
Jiapu Qian ◽  
Zhuoyong Zhao ◽  
Jiming Chen ◽  
Zengyu Xu

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