Electron density of the two‐dimensional electron gas in modulation doped layers

1983 ◽  
Vol 54 (4) ◽  
pp. 2093-2096 ◽  
Author(s):  
Kwyro Lee ◽  
Michael Shur ◽  
Timothy J. Drummond ◽  
Hadis Morkoç
Keyword(s):  
Electron Density ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

DONOR BINDING ENERGY IN TWO DIMENSIONS

1994 ◽  
Vol 08 (17) ◽  
pp. 1041-1043 ◽  
Author(s):  
E. S. ACKLEH ◽  
G. D. MAHAN ◽  
JI-WEI WU
Keyword(s):  
Binding Energy ◽  
Electron Density ◽  
Electron Gas ◽  
Two Dimensions ◽  
Three Dimensions ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Donor Binding Energy ◽  
Dimensional Electron Gas

We calculate numerically the binding energy of an electron bound to a proton in two-dimensional electron gas. Unlike the case in three dimensions, in 2D the binding energy is nonzero for all values of electron density.

scholarly journals Equations for the Electron Density of the Two-Dimensional Electron Gas in Realistic AlGaN/GaN Heterostructures

2021 ◽  
Vol 1 (3) ◽  
pp. 171-175
Author(s):  
Saad Ullah Rathore ◽  
Sima Dimitrijev ◽  
Hamid Amini Moghadam ◽  
Faisal Mohd-Yasin
Keyword(s):  
Electron Density ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Metal Gate ◽  
Two Dimensional Electron Gas ◽  
The Difference ◽  
Dimensional Electron Gas ◽  
Gan Heterostructure ◽  
Mobile Ions

This paper presents equations for the electron density of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures in three realistic scenarios: (1) AlGaN/GaN heterostructure with surface exposed to ambient with mobile ions, (2) metal gate deposited on the AlGaN surface, and (3) a thick dielectric passivation layer on the AlGaN surface. To derive the equations, we analyzed these scenarios by applying Gauss’s law. In contrast to the idealistic models, our analysis shows that the 2DEG charge density is proportional to the difference between spontaneous polarization of AlGaN and GaN, whereas surprisingly, it is independent of the piezoelectric polarization.

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