Determination of strain distributions in ion‐implanted magnetic bubble garnets applying x‐ray dynamical theory

1983 ◽  
Vol 54 (2) ◽  
pp. 715-721 ◽  
Author(s):  
T. Takeuchi ◽  
N. Ohta ◽  
Y. Sugita ◽  
A. Fukuhara
Keyword(s):  
Dynamical Theory ◽  
Magnetic Bubble ◽  
X Ray ◽  
Ion Implanted

scholarly journals X-ray microscopy of laser-produced plasmas with the use of bent crystals

1991 ◽  
Vol 9 (1) ◽  
pp. 135-148 ◽  
Author(s):  
E. Förster ◽  
K. Gäbel ◽  
I. Uschmann
Keyword(s):  
Dynamical Theory ◽  
High Luminosity ◽  
Spectral Window ◽  
X Ray ◽  
Lyman Alpha ◽  
Laser Facility ◽  
Spectral Ranges ◽  
Bent Crystals ◽  
Intercombination Line

X-ray spectroscopical and microscopical methods are used for the determination of the spectral and spatial distribution of X-ray intensity of laser-produced plasmas. The use of Bragg reflections of two-dimensionally bent crystals enables the X-ray microscopical imaging in narrow spectral ranges (Δλ/λ = 10−4 to 10−2) with wavelengths 0.1 nm < λ > 2.6 nm. It is possible to adapt, in the X-ray microscope, the distances, magnification, position, and width of the spectral window to the special conditions of the laser facility. Manufacturing and testing of the two-dimensionally bent crystals requires a great deal of effort. It was demonstrated that a spatial resolution of about 5 μm was achieved, and that the experimentally determined reflectivity was found to be in close agreement with the dynamical theory of X-ray interferences. Due to high luminosity of the X-ray microscope, in experiments with laser-produced plasmas it was necessary to attenuate the radiation with aperture-limiting diaphragms or filters down to 0.01–1% of the original intensity in the case of a magnification of about one. Emission of the resonance line W 1–2, the intercombination line of helium-like ions, and Lyman alpha line were imaged simultaneously with a three-channel microscope. Such images form the foundation for establishing the Ne(r), Tz(r) maps.

Determination of dislocation loop size and density in ion implanted and annealed silicon by simulation of triple crystal X-ray rocking curves

1987 ◽  
Vol 100 (1) ◽  
pp. 95-104 ◽  
Author(s):  
P. Zaumseil ◽  
U. Winter ◽  
F. Cembali ◽  
M. Servidori ◽  
Z. Sourer
Keyword(s):  
Dislocation Loop ◽  
X Ray ◽  
Loop Size ◽  
Ion Implanted

X‐ray determination of strain and damage distributions in ion‐implanted layers

1979 ◽  
Vol 34 (9) ◽  
pp. 539-542 ◽  
Author(s):  
V. S. Speriosu ◽  
H. L. Glass ◽  
T. Kobayashi
Keyword(s):  
X Ray ◽  
Ion Implanted

X-ray determination of strain in ion implanted GaN

2002 ◽  
Vol 190 (1-4) ◽  
pp. 878-881 ◽  
Author(s):  
S.B. Qadri ◽  
B. Molnar ◽  
M. Yousuf ◽  
C.A. Carosella
Keyword(s):  
X Ray ◽  
Ion Implanted

Determination of the interface structural morphology from grazing-incidence X-ray diffraction data using dynamical theory

1997 ◽  
Vol 384 (1-3) ◽  
pp. 254-259 ◽  
Author(s):  
Tsai-Sheng Gau ◽  
Hung-Chun Chien ◽  
Shih-Lin Chang ◽  
Mei-Yen Li ◽  
Maw-Kuen Wu
Keyword(s):  
Diffraction Data ◽  
Grazing Incidence ◽  
Dynamical Theory ◽  
X Ray Diffraction ◽  
Structural Morphology ◽  
X Ray

X-ray extinction changes due to dislocations

2007 ◽  
Vol 40 (6) ◽  
pp. 990-998
Author(s):  
M. Masimov
Keyword(s):  
Experimental Data ◽  
Scattering Amplitudes ◽  
Scattering Theory ◽  
Pair Correlation ◽  
Dynamical Theory ◽  
Correct Interpretation ◽  
X Ray ◽  
Diffraction Phenomenon ◽  
Integrated Intensities

A correct interpretation of the diffraction phenomenon in crystals with low dislocation content, for which the kinematical scattering theory does not yield any reasonable results, was carried out by X-ray extinction treatments. Different approaches to investigating the dislocation-induced X-ray extinction changes are reviewed and the applicability of the statistical dynamical theory to analysis of the substructure characteristics of crystals is discussed. A relationship between the scattering amplitudes and the dislocation density in crystals is established by using pair correlation functions. A procedure for determination of the substructure characteristics by means of measurements of the integrated intensities is proposed. The tests illustrate satisfactory agreement of the investigated approaches with experimental data.

X‐ray topographic determination of the absence of lateral strains in ion‐implanted silicon

1972 ◽  
Vol 43 (10) ◽  
pp. 4262-4263 ◽  
Author(s):  
K. N. Tu ◽  
P. Chaudhari ◽  
K. Lal ◽  
B. L. Crowder ◽  
S. I. Tan
Keyword(s):  
X Ray ◽  
Ion Implanted

New Possibilities for Electron Diffraction

1971 ◽  
Vol 29 ◽  
pp. 172-173
Author(s):  
J. M. Cowley
Keyword(s):  
Electron Diffraction ◽  
Fourier Coefficients ◽  
Crystal Morphology ◽  
Dynamical Theory ◽  
Computing Methods ◽  
Phase Identification ◽  
X Ray ◽  
Combining Data ◽  
Sufficient Precision

Apart from its well-known applications for phase identification and determinations of geometry and orientations in conjunction with bright- and darkfield electron microscopy, electron diffraction has undergone considerable development in the last few years, principally in the direction of a more quantitative use of the technique. Computing methods are available for the calculation of intensities with arbitrary accuracy for well-characterized specimens. Instruments for the accurate measurement of diffracted intensities and for energy analysis have been developed. The major lack, in many cases, is a systematic method for combining data from diffraction and microscopy to determine the crystal morphology, perfection and orientation with sufficient precision. Each of these factors can affect the diffraction intensities strongly. Any one of them may be determined if the others and the crystal structure are known.In cases for which the specimen characteristics may be defined with sufficient precision, the comparison of intensities calculated by use of n-beam dynamical theory and experimental observation has shown excellent agreement and led to the determination of Fourier coefficients of potential distribution with an accuracy of the order of 0.5 per cent, which is more than comparable with the most precise X-ray measurements.

scholarly journals Erratum: X‐ray determination of strain and damage distributions in ion‐implanted layers

1979 ◽  
Vol 35 (12) ◽  
pp. 947-947
Author(s):  
V. S. Speriosu ◽  
H. L. Glass ◽  
T. Kobayashi
Keyword(s):  
X Ray ◽  
Ion Implanted
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