Interdiffusion in copper–aluminum thin film bilayers. II. Analysis of marker motion during sequential compound formation

1983 ◽  
Vol 54 (12) ◽  
pp. 6929-6937 ◽  
Author(s):  
H. T. G. Hentzell ◽  
K. N. Tu
1981 ◽  
Vol 52 (6) ◽  
pp. 4047-4054 ◽  
Author(s):  
G. Majni ◽  
C. Nobili ◽  
G. Ottaviani ◽  
M. Costato ◽  
E. Galli

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.


2018 ◽  
Vol 10 (35) ◽  
pp. 29486-29495 ◽  
Author(s):  
Gi Duk Kwon ◽  
Eric Moyen ◽  
Yeo Jin Lee ◽  
Jemee Joe ◽  
Didier Pribat

1991 ◽  
Vol 244 (1-2) ◽  
pp. 89-95 ◽  
Author(s):  
Lawrence H Dubois ◽  
Bernard R Zegarski ◽  
Mihal E Gross ◽  
Ralph G Nuzzo

1992 ◽  
pp. 65-72
Author(s):  
Saswati Datta ◽  
Yoon-Gi Kim ◽  
P. A. Dowben ◽  
John A. Glass ◽  
Shreyas S. Kher ◽  
...  

1976 ◽  
Vol 13 (1) ◽  
pp. 68-71 ◽  
Author(s):  
J. K. Howard ◽  
R. F. Lever ◽  
P. J. Smith ◽  
P. S. Ho

Sign in / Sign up

Export Citation Format

Share Document