The capacitance of rf sputtered hydrogenated amorphous silicon, Schottky barrier diodes

1983 ◽  
Vol 54 (12) ◽  
pp. 7025-7033 ◽  
Author(s):  
H. L. Fernandez‐Canque ◽  
J. Allison ◽  
M. J. Thompson
Keyword(s):  
Amorphous Silicon ◽  
Schottky Barrier ◽  
Hydrogenated Amorphous Silicon ◽  
Schottky Barrier Diodes ◽  
Hydrogenated Amorphous

Photocapacitance and Hole Drift Mobility Measurements in Hydrogenated Amorphous Silicon (a-Si:H)

1997 ◽  
Vol 467 ◽  
Author(s):  
Indra Nurdjaja ◽  
E. A. Schiff
Keyword(s):  
Amorphous Silicon ◽  
Schottky Barrier ◽  
Reverse Bias ◽  
Voltage Dependence ◽  
Hydrogenated Amorphous Silicon ◽  
Drift Mobility ◽  
Schottky Barrier Diodes ◽  
Dispersion Effect ◽  
Hydrogenated Amorphous

ABSTRACTWe present measurements of the photocapacitance in hydrogenated amorphous silicon (a-Si:H) Schottky barrier diodes under reverse bias. A calculation relating photocapacitance to hole drift mobility measurements is also presented; the calculation incorporates the prominent dispersion effect for holes in a-Si:H usually attributed to valence bandtail trapping. The calculation accounts quantitatively for the magnitude and voltage-dependence of the photocapacitance.

Hydrogenated amorphous silicon nanowire transistors with Schottky barrier source/drain junctions

2010 ◽  
Vol 97 (14) ◽  
pp. 143509 ◽  
Author(s):  
Kurtis D. Cantley ◽  
Anand Subramaniam ◽  
Ramapriyan R. Pratiwadi ◽  
Herman Carlo Floresca ◽  
Jinguo Wang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Schottky Barrier ◽  
Silicon Nanowire ◽  
Hydrogenated Amorphous Silicon ◽  
Nanowire Transistors ◽  
Hydrogenated Amorphous

Metal / Hydrogenated Amorphous Silicon Interfaces

1987 ◽  
Vol 95 ◽  
Author(s):  
Jerzy Kanicki
Keyword(s):  
Amorphous Silicon ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Hydrogenated Amorphous Silicon ◽  
Carrier Injection ◽  
Metal Work Function ◽  
Consistent Model ◽  
Current Saturation ◽  
Metal Work ◽  
Hydrogenated Amorphous

The contact properties between different metals and hydrogenated amorphous silicon, prepared by various deposition techniques in different laboratories, are reviewed. From these studies the appropriate metallizations have been established for the achievement of Schottky diode, quasi-ohmic or ohmic contact to undoped and doped films. The various characteristic parameters describing Schottky barrier interfaces such as ideality factor, current saturation, contact resistance and barrier height are discussed. The dependence of Schottky barrier height upon the metal work function, measuring and annealing temperature, and optical band-gap are also reported. The minority-carrier injection and series resistance effects on the contact properties of a-Si:H diodes are described. All the results are interpreted in terms of a self-consistent model that exhibits an electrode-limited to bulk-limited transition.

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