Hydrogenated amorphous silicon growth by CO2laser photodissociation of silane

1982 ◽  
Vol 53 (9) ◽  
pp. 6479-6481 ◽  
Author(s):  
R. Bilenchi ◽  
I. Gianinoni ◽  
M. Musci
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Growth ◽  
Hydrogenated Amorphous

On the Role of Surface Diffusion and Its Relation to the Hydrogen Incorporation During Hydrogenated Amorphous Silicon Growth

2003 ◽  
Vol 762 ◽  
Author(s):  
A.H.M. Smets ◽  
W.M.M. Kessels ◽  
M.C.M. van de Sanden
Keyword(s):  
Activation Energy ◽  
Amorphous Silicon ◽  
Surface Diffusion ◽  
Diffusion Processes ◽  
Growth Parameters ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogen Incorporation ◽  
Silicon Growth ◽  
Surface Diffusion Processes ◽  
Hydrogenated Amorphous

AbstractThe incorporation of hydrogen in vacancies and at void surfaces during hydrogenated amorphous silicon growth from a remote expanding thermal plasma (ETP) is systematically studied by variation of the mass growth flux Γa-Si:H and substrate temperatureTsub. An evident relation between the void incorporation and the growth parameters Γa-Si:H andTsubhas been observed. We speculate on a possible relation with the surface diffusion processes during deposition. An activation energy for surface diffusion during a-Si:H growth of 0.8-1.1 eV is obtained using this assertion, similar to the activation energy deduced from surface roughness evolution studies. For compact films hydrogen is predominantly present at vacancies, and a possible relation with the hydrogen removal mechanism during deposition is discussed.

Laser Induced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon

1982 ◽  
Vol 17 ◽  
Author(s):  
Renzo Bilenchi ◽  
Iva Gianinoni ◽  
Mirella Musci ◽  
Roberto Murri
Keyword(s):  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Substrate Surface ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Photochemical Process ◽  
Flux Reactor ◽  
Silicon Growth ◽  
Ray Patterns ◽  
Hydrogenated Amorphous

ABSTRACTSome results on hydrogenated amorphous silicon growth by CO2 laser photodissociation of silane are reported. A 100 W CW CO2 laser was used as the excitation source. A horizontal configuration was adopted, where the laser beam is sent parallel to the substrate surface inside a flux reactor, and its energy is used to excite and dissociate the silane molecules flowing near the solid surface. The laser has no direct heating effect on the substrate, which is independently heated by an oven.The photoproduced radicals by interacting with the surface grow a film at a rate strongly depending on silane pressure, substrate temperature and laser intensity. This experimental configuration allows depositions on large areas, owing to the large number of reactant molecules involved in the photochemical process. Moreover, material can be produced with a continuously variable hydrogen content, since the substrate temperature required for obtaining depositions can be as low as room temperature and adjusted independently of the other process parameters.The film properties are similar to those of the glow discharge deposited material. The film amorphousness and the hydrogen presence either in monohydride and dihydride groups are evidenced by x-ray patterns and ir spectra. Results on the electrical and optical properties are also reported.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous
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