Plasma‐hydrogenation effects on conductivity and electron spin resonance in undoped polycrystalline silicon

1982 ◽  
Vol 53 (7) ◽  
pp. 5022-5027 ◽  
Author(s):  
S. Hasegawa ◽  
S. Takenaka ◽  
Y. Kurata
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Polycrystalline Silicon ◽  
Spin Resonance ◽  
Plasma Hydrogenation

Electron spin resonance in laser-crystallized polycrystalline silicon-germanium thin films

2010 ◽  
Vol 207 (3) ◽  
pp. 570-573 ◽  
Author(s):  
M. Weizman ◽  
L.-P. Scheller ◽  
N. H. Nickel ◽  
K. Lips ◽  
B. Yan
Keyword(s):  
Thin Films ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Spin Resonance

Electron spin resonance study of hydrogenation effects in polycrystalline silicon

1986 ◽  
Vol 49 (23) ◽  
pp. 1620-1622 ◽  
Author(s):  
Dominique Ballutaud ◽  
Marc Aucouturier ◽  
Florence Babonneau
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Polycrystalline Silicon ◽  
Electron Spin Resonance Study ◽  
Spin Resonance ◽  
Spin Resonance Study

Electron-Spin-Resonance Investigation of Laser Crystallized Polycrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
K. Brendel ◽  
N. H. Nickel ◽  
K. Lips ◽  
W. Fuhs
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Polycrystalline Silicon ◽  
Dangling Bonds ◽  
Microcrystalline Silicon ◽  
Temperature Dependent ◽  
Resonance Investigation ◽  
Residual Hydrogen ◽  
Spin Resonance ◽  
Electron Spin Resonance Investigation

AbstractDoped and undoped laser crystallized polycrystalline silicon was investigated by electron-spin-resonance experiments. In P-doped samples two resonance are detected at g = 2.0053 and g = 1.998 which are due to silicon dangling bonds and conducting electrons, respectively. After crystallization a large amount of hydrogen remains in the samples. This residual hydrogen can be activated to reduce the spin density by passivating dangling-bonds. The temperature dependent investigation of the conducting electron resonance reveals that the susceptibility can be described by the sum of Pauli and Curie paramagnetism. The data are discussed in terms of models developed for single crystal and microcrystalline silicon.

Sign in / Sign up

Export Citation Format

Share Document