Microstructure and light emission of ac thin‐film electroluminescent devices

1982 ◽  
Vol 53 (6) ◽  
pp. 4146-4151 ◽  
Author(s):  
H. Venghaus ◽  
D. Theis ◽  
H. Oppolzer ◽  
S. Schild
Keyword(s):  
Thin Film ◽  
Light Emission ◽  
Electroluminescent Devices

RED LIGHT EMITTING SCHOTTKY DIODES ON p-TYPE GaN/AlN/Si(111) SUBSTRATE

2010 ◽  
Vol 24 (09) ◽  
pp. 1129-1135 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Thin Film ◽  
Ohmic Contacts ◽  
Light Emission ◽  
Hole Concentration ◽  
Schottky Diodes ◽  
Red Light ◽  
Forward Bias ◽  
Schottky Contacts ◽  
Electroluminescent Devices ◽  
Light Color

High quality GaN layers doped with Mg were grown on Si (111) substrates using high temperature AlN as buffer layer by radio-frequency molecular beam epitaxy. From the Hall measurements, fairly uniform high hole concentration as high as (4–5) × 1020 cm -3 throughout the GaN was achieved. The fabrication of the device is very simple. Nickel ohmic contacts and Schottky contacts using indium were fabricated on Mg -doped p-GaN films. The light emission has been obtained from these thin film electroluminescent devices. Thin film electroluminescent devices were operated under direct current bias. Schottky and ohmic contacts used as cathode and anode were employed in these investigations. Alternatively, two Schottky contacts could be probed as cathode and anode. Thin film electroluminescent devices were able to emit light. However, electrical and optical differences could be observed from the two different probing methods. The red light color could be observed when the potential between the electrodes was increased gradually under forward bias of 8 V at room temperature. Electrical properties of these thin film electroluminescent devices were characterized by current–voltage (I–V) system, the heights of barriers determined from the I–V measurements were found to be related to the electroluminescence.

Band-Gap Energy Dependence of Emission Spectra in Rare Earth-Doped Zn(1-x)CdxS Thin Film Electroluminescent Devices

1992 ◽  
Vol 31 (Part 1, No. 2A) ◽  
pp. 295-300 ◽  
Author(s):  
Noboru Miura ◽  
Takashi Sasaki ◽  
Hironaga Matsumoto ◽  
Ryotaro Nakano
Keyword(s):  
Thin Film ◽  
Rare Earth ◽  
Band Gap ◽  
Energy Dependence ◽  
Emission Spectra ◽  
Band Gap Energy ◽  
Electroluminescent Devices ◽  
Gap Energy ◽  
Rare Earth Doped

Space charge and excitation efficiency in ZnS thin film electroluminescent devices

1994 ◽  
Vol 138 (1-4) ◽  
pp. 1023-1027 ◽  
Author(s):  
A. Zeinert ◽  
P. Benalloul ◽  
J. Benoit ◽  
C. Barthou ◽  
H.-E. Gumlich
Keyword(s):  
Thin Film ◽  
Space Charge ◽  
Electroluminescent Devices ◽  
Excitation Efficiency

Near-Infrared Light Emission from of Er-Doped ZnO Thin Film in Micropits Processed on Si Substrate

2006 ◽  
Vol 320 ◽  
pp. 113-116
Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Naoki Ohashi ◽  
Junichi Niitsuma ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Thin Film ◽  
Near Infrared ◽  
Light Emission ◽  
Infrared Light ◽  
Zno Thin Film ◽  
Si Substrate ◽  
Near Infrared Light ◽  
Transmission Electron ◽  
Doped Zno ◽  
Er Doped

We have obtained Er-doped ZnO thin film in a micropattern of reverse trapezoids processed on Si substrate by sputtering and ultrafine polishing techniques. Near-infrared light emission was detected successfully from the thin film filling a single micropit with 10 μm square. Transmission electron microscopy (TEM) observation showed epitaxial growth of ZnO crystals along the curvature of the micropit.

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