Spectral response of Schottky diodes on hydrogenated amorphous silicon: Effects of gap states

1982 ◽  
Vol 53 (6) ◽  
pp. 4531-4533 ◽  
Author(s):  
E. Arene ◽  
J. Baixeras ◽  
Ch. Longeaud
Keyword(s):  
Amorphous Silicon ◽  
Spectral Response ◽  
Schottky Diodes ◽  
Hydrogenated Amorphous Silicon ◽  
Gap States ◽  
Hydrogenated Amorphous

Spectral response design of hydrogenated amorphous silicon p-i-n diodes for ambient light sensing

2009 ◽  
Vol 94 (17) ◽  
pp. 171103
Author(s):  
S. S. Tan ◽  
C. Y. Liu ◽  
Yeu-Long Jiang ◽  
Der-Yu Lin ◽  
Klaus Y. J. Hsu
Keyword(s):  
Amorphous Silicon ◽  
Spectral Response ◽  
Hydrogenated Amorphous Silicon ◽  
Ambient Light ◽  
Light Sensing ◽  
Hydrogenated Amorphous

Stability in Amorphous Silicon

1987 ◽  
Vol 95 ◽  
Author(s):  
Z E. Smith ◽  
S. Wagner
Keyword(s):  
Electron Spin Resonance ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Recovery ◽  
Defect States ◽  
Spin Resonance ◽  
Resonance Data ◽  
Electron Spin Resonance Data ◽  
Gap States ◽  
Hydrogenated Amorphous

AbstractThe experimental phenomena associated with light-induced degradation and thermal recovery of hydrogenated amorphous silicon (a-Si:H) films are reviewed, with special emphasis on the limitations of each experimental technique. When several techniques are used in concert, a fuller picture emerges. Recent experiments suggest different positions in the band-gap of the paramagnetic-associated defect states (the dangling bonds) for doped and undopedfilms; this information can be combined with conductivity, sub-bandgap optical absorption and electron spin resonance data to yield a model for the density of gap states (DOS) in a- Si:H, including how the DOS changes upon illumination and annealing.

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