Crystallitic orientation effects on charge transport in polythiophene thin-film transistors

2010 ◽  
Vol 96 (6) ◽  
pp. 063301 ◽  
Author(s):  
Liping Zhou ◽  
Xue-Feng Wang ◽  
Qin Han ◽  
Jian-Chun Wu ◽  
Zhen-Ya Li
Keyword(s):  
Thin Film ◽  
Charge Transport ◽  
Thin Film Transistors ◽  
Orientation Effects

Real-time monitoring of trap dynamics reveals the electronic states that limit charge transport in crystalline organic semiconductors

2020 ◽  
Vol 7 (9) ◽  
pp. 2390-2398
Author(s):  
Hamna F. Iqbal ◽  
Emma K. Holland ◽  
John E. Anthony ◽  
Oana D. Jurchescu
Keyword(s):  
Thin Film ◽  
Charge Transport ◽  
Real Time ◽  
Organic Semiconductors ◽  
Thin Film Transistors ◽  
Electronic States ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Real Time Monitoring

Access to the dynamics of trap annihilation/generation resulting from isomer rearrangement identifies the performance-limiting processes in organic thin-film transistors.

What could be the Highest Hopping Mobility in Organic Thin-Film Transistors?

MRS Advances ◽  
2016 ◽  
Vol 1 (38) ◽  
pp. 2659-2664
Author(s):  
Varsha Rani ◽  
Akanksha Sharma ◽  
Subhasis Ghosh
Keyword(s):  
Thin Film ◽  
Charge Transport ◽  
Transport Properties ◽  
Thin Film Transistors ◽  
Weak Coupling ◽  
Theoretical Study ◽  
Schottky Diodes ◽  
Organic Thin Film Transistors ◽  
Electronic Coupling ◽  
Organic Thin Film

ABSTRACTCharge transport properties of pentacene have been investigated by a joint experimental and theoretical study. The growth of pentacene on the substrates shows mainly two different polymorphic phases, a bulk phase and a thin-film phase. The thin-film phase is crucial for the charge transport in two-terminal and three-terminal devices such as organic Schottky diodes and organic thin film transistors, respectively. Experimentally, mobility in two-terminal devices is less by five orders of magnitude than that in three-terminal devices. We show here that this difference can be explained on the basis of strong electronic coupling between molecular dimers located in the ab-plane and relatively weak coupling between the planes (along the c-axis).

Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures

2018 ◽  
Vol 10 (24) ◽  
pp. 20661-20671 ◽  
Author(s):  
Jan Krausmann ◽  
Shawn Sanctis ◽  
Jörg Engstler ◽  
Martina Luysberg ◽  
Michael Bruns ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Charge Transport ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
Oxide Heterostructures

Charge Transport Mechanism in p-Channel Tin Monoxide Thin-Film Transistors

2017 ◽  
Vol 38 (4) ◽  
pp. 473-476 ◽  
Author(s):  
Hee-Joong Kim ◽  
Chan-Yong Jeong ◽  
Sang-Dae Bae ◽  
Jeong-Hwan Lee ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Charge Transport ◽  
Thin Film Transistors ◽  
Transport Mechanism ◽  
Charge Transport Mechanism ◽  
Tin Monoxide
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