scholarly journals Low-loss superconducting resonant circuits using vacuum-gap-based microwave components

2010 ◽  
Vol 96 (9) ◽  
pp. 093502 ◽  
Author(s):  
Katarina Cicak ◽  
Dale Li ◽  
Joshua A. Strong ◽  
Michael S. Allman ◽  
Fabio Altomare ◽  
...  
2015 ◽  
Vol 117 (10) ◽  
pp. 103911 ◽  
Author(s):  
Arian Rahimi ◽  
Jiyu Wu ◽  
Xiaoyu Cheng ◽  
Yong-Kyu ‘YK’ Yoon

2009 ◽  
Vol 19 (3) ◽  
pp. 948-952 ◽  
Author(s):  
K. Cicak ◽  
M.S. Allman ◽  
J.A. Strong ◽  
K.D. Osborn ◽  
R.W. Simmonds
Keyword(s):  
Low Loss ◽  

Author(s):  
Efat Nematpour ◽  
Mohamad Hossein Ostovarzadeh ◽  
Seyed Ali Razavi

The gap waveguide technology is a new technique used for designing and fabricating microwave components, ensuring a low-loss and easy fabrication process, especially at high frequencies, and allowing for the production of multilayer structures due to the lack of requirement of an electrical connection between the metal layers of the waveguide structure. This paper presents the design and areas of implementation of single-hole and multi-hole 20 dB Bethe couplers, using the groove gap waveguide (GGW) technology for Ku band. Simulation results show that the operating bandwidth of the proposed design is over 40% wider, and its isolation rate is more than 25 dB higher. By using the multi hole configuration, a bandwidth that is more than 59% wider and the isolation rate of over 30 dB may be obtained.


Author(s):  
David C. Joy ◽  
Dennis M. Maher

High-resolution images of the surface topography of solid specimens can be obtained using the low-loss technique of Wells. If the specimen is placed inside a lens of the condenser/objective type, then it has been shown that the lens itself can be used to collect and filter the low-loss electrons. Since the probeforming lenses in TEM instruments fitted with scanning attachments are of this type, low-loss imaging should be possible.High-resolution, low-loss images have been obtained in a JEOL JEM 100B fitted with a scanning attachment and a thermal, fieldemission gun. No modifications were made to the instrument, but a wedge-shaped, specimen holder was made to fit the side-entry, goniometer stage. Thus the specimen is oriented initially at a glancing angle of about 30° to the beam direction. The instrument is set up in the conventional manner for STEM operation with all the lenses, including the projector, excited.


Author(s):  
Oliver C. Wells

The low-loss electron (LLE) image in the scanning electron microscope (SEM) is useful for the study of uncoated photoresist and some other poorly conducting specimens because it is less sensitive to specimen charging than is the secondary electron (SE) image. A second advantage can arise from a significant reduction in the width of the “penetration fringe” close to a sharp edge. Although both of these problems can also be solved by operating with a beam energy of about 1 keV, the LLE image has the advantage that it permits the use of a higher beam energy and therefore (for a given SEM) a smaller beam diameter. It is an additional attraction of the LLE image that it can be obtained simultaneously with the SE image, and this gives additional information in many cases. This paper shows the reduction in penetration effects given by the use of the LLE image.


Author(s):  
C P Scott ◽  
A J Craven ◽  
C J Gilmore ◽  
A W Bowen

The normal method of background subtraction in quantitative EELS analysis involves fitting an expression of the form I=AE-r to an energy window preceding the edge of interest; E is energy loss, A and r are fitting parameters. The calculated fit is then extrapolated under the edge, allowing the required signal to be extracted. In the case where the characteristic energy loss is small (E < 100eV), the background does not approximate to this simple form. One cause of this is multiple scattering. Even if the effects of multiple scattering are removed by deconvolution, it is not clear that the background from the recovered single scattering distribution follows this simple form, and, in any case, deconvolution can introduce artefacts.The above difficulties are particularly severe in the case of Al-Li alloys, where the Li K edge at ~52eV overlaps the Al L2,3 edge at ~72eV, and sharp plasmon peaks occur at intervals of ~15eV in the low loss region. An alternative background fitting technique, based on the work of Zanchi et al, has been tested on spectra taken from pure Al films, with a view to extending the analysis to Al-Li alloys.


Author(s):  
Daniel UGARTE

Small particles exhibit chemical and physical behaviors substantially different from bulk materials. This is due to the fact that boundary conditions can induce specific constraints on the observed properties. As an example, energy loss experiments carried out in an analytical electron microscope, constitute a powerful technique to investigate the excitation of collective surface modes (plasmons), which are modified in a limited size medium. In this work a STEM VG HB501 has been used to study the low energy loss spectrum (1-40 eV) of silicon spherical particles [1], and the spatial localization of the different modes has been analyzed through digitally acquired energy filtered images. This material and its oxides have been extensively studied and are very well characterized, because of their applications in microelectronics. These particles are thus ideal objects to test the validity of theories developed up to now.Typical EELS spectra in the low loss region are shown in fig. 2 and energy filtered images for the main spectral features in fig. 3.


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