Optical absorption coefficient and minority carrier diffusion length measurements in low‐cost silicon solar cell material

1982 ◽  
Vol 53 (11) ◽  
pp. 7502-7504 ◽  
Author(s):  
Randall T. Swimm ◽  
Katherine A. Dumas
Keyword(s):  
Solar Cell ◽  
Optical Absorption ◽  
Silicon Solar Cell ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Low Cost ◽  
Optical Absorption Coefficient ◽  
Minority Carrier Diffusion Length ◽  
Length Measurements ◽  
Solar Cell Material

Application de la méthode photonique à la détermination des paramètres physiques d'une cellule solaire monocristalline

2002 ◽  
Vol 80 (7) ◽  
pp. 733-743 ◽  
Author(s):  
M Ben Amar ◽  
A Ben Arab
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Diffusion Length ◽  
Optical Absorption Coefficient ◽  
Physical Parameters ◽  
Base Region ◽  
Technological Parameters ◽  
Base Thickness ◽  
Modulated Light ◽  
Minority Carriers

The photonic's method is used in the study of monocristalline silicon solar cell (N+P). The induced photocurrent in the cell is analyzed with respect to the technological parameters such as the optical absorption coefficient of silicon and the emitter and base thickness. The spatial and frequential variations of the photocurrent of the cell, when the latter is illuminated by a sinusoidal modulated light, allow access to the diffusion length and lifetime of the minority carriers generated in a given region of the cell. In this paper, the physical parameters related to the base region are determined. In addition, this access is shown to be possible only when the total photocurrent of the cell is reduced to the base diffusion photocurrent.

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