scholarly journals Enhancement of Co substitution induced by Eu codoping in ZnO-based diluted magnetic semiconducting thin films

2010 ◽  
Vol 107 (3) ◽  
pp. 033909 ◽  
Author(s):  
P. Photongkam ◽  
Y. B. Zhang ◽  
M. H. N. Assadi ◽  
S. Li ◽  
D. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Co Substitution ◽  
Diluted Magnetic ◽  
Semiconducting Thin Films

Zn0.9Co0.1O-based diluted magnetic semiconducting thin films

2004 ◽  
Vol 84 (25) ◽  
pp. 5255-5257 ◽  
Author(s):  
S. Ramachandran ◽  
Ashutosh Tiwari ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Diluted Magnetic ◽  
Semiconducting Thin Films

Enhancement of χ(3) by Sb substitution in As40Se50Ge10 amorphous semiconducting thin films

2020 ◽  
Author(s):  
Ramakanta Naik ◽  
Abhilash Parija ◽  
Sibaprasad Mohapatra
Keyword(s):  
Thin Films ◽  
Semiconducting Thin Films

Enhanced magneto-caloric effect upon fourth element (Cu, Fe, Co) substitution in Ni–Mn–Sn thin films

2019 ◽  
Vol 125 (1) ◽  
Author(s):  
Rajkumar Modak ◽  
M. Manivel Raja ◽  
Ananthakrishnan Srinivasan
Keyword(s):  
Thin Films ◽  
Co Substitution ◽  
Caloric Effect

Irradiation Induced Changes in Semiconducting Thin Films

2013 ◽  
Vol 341 ◽  
pp. 181-210 ◽  
Author(s):  
S.K. Tripathi
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Heavy Ions ◽  
Semiconductor Device ◽  
High Energy ◽  
Device Fabrication ◽  
Electrical Performance ◽  
Radiation Environment ◽  
Extended Defects ◽  
Semiconducting Thin Films

High-energy electron, proton, neutron, photon and ion irradiation of semiconductor diodes and solar cells has long been a topic of considerable interest in the field of semiconductor device fabrication. The inevitable damage production during the process of irradiation is used to study and engineer the defects in semiconductors. In a strong radiation environment in space, the electrical performance of solar cells is degraded due to direct exposure to energetically charged particles. A considerable amount of work has been reported on the study of radiation damage in various solar cell materials and devices in the recent past. In most cases, high-energy heavy ions damage the material by producing a large amount of extended defects, but high-energy light ions are suitable for producing and modifying the intrinsic point defects. The defects can play a variety of electronically active roles that affect the electrical, structural and optical properties of a semiconductor. This review article aims to present an overview of the advancement of research in the modification of glassy semiconducting thin films using different types of radiations (light, proton and swift heavy ions). The work which has been done in our laboratory related to irradiation induced effects in semiconducting thin films will also be compared with the existing literature.

Long-Chain 3,4-Ethylenedioxythiophene/Thiophene Oligomers and Semiconducting Thin Films Prepared by Their Electropolymerization

2012 ◽  
Vol 4 (10) ◽  
pp. 5430-5441 ◽  
Author(s):  
K. M. Nalin de Silva ◽  
Euiyong Hwang ◽  
Wilson K. Serem ◽  
Frank R. Fronczek ◽  
Jayne C. Garno ◽  
...  
Keyword(s):  
Thin Films ◽  
Semiconducting Thin Films ◽  
Long Chain
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