Interface instability and cell formation in ion‐implanted and laser‐annealed silicon

1981 ◽  
Vol 52 (3) ◽  
pp. 1289-1293 ◽  
Author(s):  
J. Narayan
Keyword(s):  
Cell Formation ◽  
Interface Instability ◽  
Ion Implanted

Segregation and Crystallization Phenomena in Germanium

1982 ◽  
Vol 13 ◽  
Author(s):  
G. J. Clark ◽  
A. G. Cullis ◽  
D. C. Jacobson ◽  
J. M. Poate ◽  
Michael O. Thompson
Keyword(s):  
Liquid Phase ◽  
Cell Formation ◽  
Liquid Nitrogen Temperature ◽  
Orientation Dependence ◽  
Constitutional Supercooling ◽  
Segregation Coefficient ◽  
Interface Instability ◽  
Defect Production ◽  
Bi Segregation ◽  
Xecl Excimer Laser

ABSTRACTWhile many studies have been made of liquid phase epitaxy impurity trapping and segregation in Si little is known about the equivalent processes in Ge. In this paper we have laser annealed Ge <100> and <111> crystals implanted, at liquid nitrogen temperature, with 200 keV 210Bi ions to doses of 2 × 1015 and 1016 ions cm−2. The samples were annealed with Q-switched ruby lasers and an XeCl excimer laser. We have observed 1) velocity and orientation dependence of the Bi segregation coefficient 2) interface instability and cell formation resulting from constitutional supercooling and 3) amorphization and defect production at high velocities. The phenomena are shown to be analogous to those seen in Si.

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Influence of Heat Treatments on Microstructures in an Fe-Co-V Alloy

1974 ◽  
Vol 32 ◽  
pp. 512-513
Author(s):  
S. Mahajan ◽  
M. R. Pinnel ◽  
J. E. Bennett
Keyword(s):  
Single Phase ◽  
Alloy Composition ◽  
Supersaturated Solid Solution ◽  
Cell Formation ◽  
Heat Treatments ◽  
Air Cooling ◽  
Iced Brine ◽  
Transmission Electron ◽  
The Matrix ◽  
Bcc Structure

The microstructural changes in an Fe-Co-V alloy (composition by wt.%: 2.97 V, 48.70 Co, 47.34 Fe and balance impurities, such as C, P and Ni) resulting from different heat treatments have been evaluated by optical metallography and transmission electron microscopy. Results indicate that, on air cooling or quenching into iced-brine from the high temperature single phase ϒ (fcc) field, vanadium can be retained in a supersaturated solid solution (α2) which has bcc structure. For the range of cooling rates employed, a portion of the material appears to undergo the γ-α2 transformation massively and the remainder martensitically. Figure 1 shows dislocation topology in a region that may have transformed martensitically. Dislocations are homogeneously distributed throughout the matrix, and there is no evidence for cell formation. The majority of the dislocations project along the projections of <111> vectors onto the (111) plane, implying that they are predominantly of screw character.

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

A technique to prepare cross-sectional TEM specimens of semiconducting devices

1986 ◽  
Vol 44 ◽  
pp. 742-743
Author(s):  
A. K. Rai ◽  
P. P. Pronko
Keyword(s):  
Thin Films ◽  
Surface Region ◽  
Sample Surface ◽  
Specific Region ◽  
Cross Sectional ◽  
Thin Sections ◽  
The Past ◽  
Device Structures ◽  
Ion Implanted

Several techniques have been reported in the past to prepare cross(x)-sectional TEM specimen. These methods are applicable when the sample surface is uniform. Examples of samples having uniform surfaces are ion implanted samples, thin films deposited on substrates and epilayers grown on substrates. Once device structures are fabricated on the surfaces of appropriate materials these surfaces will no longer remain uniform. For samples with uniform surfaces it does not matter which part of the surface region remains in the thin sections of the x-sectional TEM specimen since it is similar everywhere. However, in order to study a specific region of a device employing x-sectional TEM, one has to make sure that the desired region is thinned. In the present work a simple way to obtain thin sections of desired device region is described.

EM of human atherosclerosis: Aortic fatty streaks with transitional lesion features

1992 ◽  
Vol 50 (1) ◽  
pp. 622-623
Author(s):  
K. Florian Klemp ◽  
J.R. Guyton
Keyword(s):  
Foam Cell ◽  
Cell Formation ◽  
Processing Technique ◽  
Foam Cell Formation ◽  
Tissue Preparation ◽  
Electron Microscopic ◽  
Extracellular Lipid ◽  
Electron Microscopic Cytochemistry ◽  
Human Atherosclerosis ◽  
Clinically Significant

The earliest distinctive lesions in human atherosclerosis are fatty streaks (FS), characterized initially by lipid-laden foam cell formation. Fibrous plaques (FP), the clinically significant lesions, differ from FS in several respects. In addition to foam cells, the FP also exhibit fibromuscular proliferation and a necrotic core region rich in extracellular lipid. The possible transition of FS into mature FP has long been debated, however. A subset of FS described by Katz etal., was intermediate in lipid composition between ordinary FS and FP. We investigated this hypothesis by electron microscopic cytochemistry by employing a tissue processing technique previously described by our laboratory. Osmium-tannic acid-paraphenylenediamine (OTAP) tissue preparation enabled ultrastructural analysis of lipid deposits to discern features characteristic of mature fibrous plaques.

Preparation of Backthinned Ceramic Specimens

1985 ◽  
Vol 43 ◽  
pp. 182-183
Author(s):  
A. T. Fisher ◽  
P. Angelini
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Vacuum System ◽  
Back Surface ◽  
Surface Microstructure ◽  
Ion Milling ◽  
Near Surface ◽  
Depth Profiles ◽  
Analytical Electron ◽  
Ion Implanted

Analytical electron microscopy (AEM) of the near surface microstructure of ion implanted ceramics can provide much information about these materials. Backthinning of specimens results in relatively large thin areas for analysis of precipitates, voids, dislocations, depth profiles of implanted species and other features. One of the most critical stages in the backthinning process is the ion milling procedure. Material sputtered during ion milling can redeposit on the back surface thereby contaminating the specimen with impurities such as Fe, Cr, Ni, Mo, Si, etc. These impurities may originate from the specimen, specimen platform and clamping plates, vacuum system, and other components. The contamination may take the form of discrete particles or continuous films [Fig. 1] and compromises many of the compositional and microstructural analyses. A method is being developed to protect the implanted surface by coating it with NaCl prior to backthinning. Impurities which deposit on the continuous NaCl film during ion milling are removed by immersing the specimen in water and floating the contaminants from the specimen as the salt dissolves.

LASER INDUCED ORDERING AND DEFECTS IN ION-IMPLANTED HEXAGONAL SILICON CARBIDE

1980 ◽  
Vol 41 (C4) ◽  
pp. C4-111-C4-112 ◽  
Author(s):  
V. V. Makarov ◽  
T. Tuomi ◽  
K. Naukkarinen ◽  
M. Luomajärvi ◽  
M. Riihonen
Keyword(s):  
Silicon Carbide ◽  
Ion Implanted
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