Computation of Ion Charge State Distributions After Inner-Shell Ionization In Ne, Ar And Kr Atoms Using Monte Carlo Simulation

2010 ◽  
Author(s):  
Adel M. Mohammedein ◽  
Adel A. Ghoneim ◽  
Jasem M. Al-Zanki ◽  
Ashraf H. El-Essawy ◽  
Abdul Aziz Bin Mohamed
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Charge State ◽  
Charge State Distributions ◽  
Inner Shell Ionization ◽  
Shell Ionization

Calculation of Ion Charge State Distributions After Inner-Shell Ionization in Xe Atom

2010 ◽  
Author(s):  
Adel M. Mohammedein ◽  
Adel A. Ghoneim ◽  
Kandil M. Kandil ◽  
Ibrahim M. Kadad ◽  
Abdul Aziz Bin Mohamed
Keyword(s):  
Charge State ◽  
Charge State Distributions ◽  
Inner Shell Ionization ◽  
Shell Ionization

Calculation of Ion Charge State Distributions After Inner-Shell Ionization in Xe Atom

2010 ◽  
Author(s):  
Adel M. Mohammedein ◽  
Adel A. Ghoneim ◽  
Kandil M. Kandil ◽  
Ibrahim M. Kadad ◽  
Abdul Aziz Bin Mohamed
Keyword(s):  
Charge State ◽  
Charge State Distributions ◽  
Inner Shell Ionization ◽  
Shell Ionization

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

The measurement of inner-shell ionization cross aections by electron impact in a TEM

1992 ◽  
Vol 50 (2) ◽  
pp. 1266-1267
Author(s):  
Raynald Gauvin ◽  
Gilles L'Espérance
Keyword(s):  
Electron Impact ◽  
Cross Sections ◽  
Weight Fraction ◽  
Thin Foil ◽  
Specimen Thickness ◽  
Ionization Cross ◽  
Electron Dose ◽  
Total Electron ◽  
Inner Shell Ionization ◽  
Shell Ionization

Values of cross sections for ionization of inner-shell electrons by electron impact are required for electron probe microanalysis, Auger-electron spectroscopy and electron energy-loss spectroscopy. In this work, the results of the measurement of inner-shell ionization cross-sections by electron impact, Q, in a TEM are presented for the K shell.The measurement of QNi has been performed at 120 KeV in a TEM by measuring the net X-ray intensity of the Kα line of Ni, INi, which is related to QNi by the relation :(1)where i is the total electron dose, (Ω/4π)is the fractional solid angle, ω is the fluorescence yield, α is the relative intensity factor, ε is the Si (Li) detector efficiency, A is the atomic weight, ρ is the sample density, No is Avogadro's number, t' is the distance traveled by the electrons in the specimen which is equal to τ sec θ neglecting beam broadening where τ is the specimen thickness and θ is the angle between the electron beam and the normal of the thin foil and CNi is the weight fraction of Ni.

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