scholarly journals Unification Of The Phonon Mode Behavior In Semiconductor Alloys

2010 ◽  
Author(s):  
O. Pagès ◽  
A. Chafi ◽  
J. Souhabi ◽  
A. Nassour ◽  
A. V. Postnikov ◽  
...  
Keyword(s):  
Phonon Mode ◽  
Semiconductor Alloys ◽  
Mode Behavior

scholarly journals Unification of the phonon mode behavior in semiconductor alloys: Theory andab initiocalculations

2008 ◽  
Vol 77 (12) ◽  
Author(s):  
O. Pagès ◽  
A. V. Postnikov ◽  
M. Kassem ◽  
A. Chafi ◽  
A. Nassour ◽  
...  
Keyword(s):  
Phonon Mode ◽  
Semiconductor Alloys ◽  
Mode Behavior

scholarly journals (Ga,In)P: A standard alloy in the classification of phonon mode behavior

2006 ◽  
Vol 73 (16) ◽  
Author(s):  
O. Pagès ◽  
A. Chafi ◽  
D. Fristot ◽  
A. V. Postnikov
Keyword(s):  
Phonon Mode ◽  
Mode Behavior ◽  
Standard Alloy

scholarly journals Raman characterization of the optical phonons in AlxGa1−xN layers grown by MBE and MOCVD

1997 ◽  
Vol 2 ◽  
Author(s):  
A. Cros ◽  
H. Angerer ◽  
R. Handschuh ◽  
O. Ambacher ◽  
M. Stutzmann
Keyword(s):  
Phonon Mode ◽  
Aluminum Content ◽  
Composition Range ◽  
Theoretical Calculations ◽  
Phonon Modes ◽  
Sapphire Substrates ◽  
Mode Behavior ◽  
Raman Characterization

We present the results of Raman measurements performed on AlxGa1−xN layers grown by MBE and MOCVD. The films were deposited on (0001) c-sapphire substrates, and the aluminum content covered the whole composition range for x from 0 (GaN) to 1 (AlN). It is shown that the energies of both A1(TO) and A1(LO) phonon modes smoothly increase with increasing x, indicating a one-mode behavior. The E2 phonon mode, however, presents a different behavior. Its energy increases very slowly with aluminum content and, for x≈0.4, a new phonon mode shows up which is shifted to higher energies by 50 cm−1. This new line leads to the E2 AlN mode for increasing aluminum content. The linewidths and intensities of these modes strongly depend on composition. These results are compared with recent theoretical calculations. Finally, the Raman selection rules in the MBE and MOCVD samples are compared and conclusions about the quality of the layers are drawn.

Phonon mode behavior in strained wurtziteAlN∕GaNsuperlattices

2005 ◽  
Vol 71 (11) ◽  
Author(s):  
V. Darakchieva ◽  
E. Valcheva ◽  
P. P. Paskov ◽  
M. Schubert ◽  
T. Paskova ◽  
...  
Keyword(s):  
Phonon Mode ◽  
Mode Behavior

Erratum:(Ga,In)P: A standard alloy in the classification of phonon mode behavior [Phys. Rev. B73, 165206 (2006)]

2006 ◽  
Vol 73 (24) ◽  
Author(s):  
O. Pagès ◽  
A. Chafi ◽  
D. Fristot ◽  
A. V. Postnikov
Keyword(s):  
Phonon Mode ◽  
Mode Behavior ◽  
Standard Alloy

On the anomalous phonon mode behavior in HgSe

1984 ◽  
Vol 56 (9) ◽  
pp. 2541-2546 ◽  
Author(s):  
D. N. Talwar ◽  
M. Vandevyver
Keyword(s):  
Phonon Mode ◽  
Mode Behavior

UV Raman Study of A1(LO) and E2 Phonons in InGaN Alloys Grown by Metal-Organic Chemical Vapor Deposition on (0001) Sapphire Substrates

2000 ◽  
Vol 639 ◽  
Author(s):  
Dimitri Alexson ◽  
Leah Bergman ◽  
Robert J. Nemanich ◽  
Mitra Dutta ◽  
Michael A. Stroscio ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Phonon Mode ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Sapphire Substrates ◽  
Mode Behavior ◽  
Uv Raman Spectroscopy ◽  
Metal Organic ◽  
Uv Raman ◽  
Organic Chemical Vapor Deposition

ABSTRACTWe report on UV Raman spectroscopy of InxGa1−xN thin films grown on (0001) sapphire substrates using a specially designed metal-organic chemical vapor deposition (MOCVD) reactor. Eight films were examined in the compositional range 0<×<0.50. Mid and deep-UV Raman spectroscopy was done with the 325.2 nm line of the HeCd laser and the 244 nm line of a double frequency Ar ion laser. The mode behavior of the A1(LO) and E2 phonons was also investigated. We have found compelling evidence for one-mode behavior for the A1(LO) phonon mode, while our data for the E2 mode deviates from the predictions for one-mode behavior. The results for the A1(LO) mode are consistent with the previously reported phonon mode behavior in AlGaN alloys. Also, evidence regarding the presence of compositional inhomogeneities and spinodal decomposition in InGaN thin films is presented.

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