Calculation of Carrier Scattering in Mn-doped InGaAs Quantum Well with Hole-mediated Ferromagnetism

2010 ◽  
Author(s):  
Ljudmila Shchurova ◽  
Vladimir Kulbachinskii ◽  
Marília Caldas ◽  
Nelson Studart
Keyword(s):  
Quantum Well ◽  
Carrier Scattering ◽  
Mn Doped ◽  
Ingaas Quantum Well

Calculation of Carrier Scattering and Negative Magnetoresistance in Mn-Doped GaAs/InGaAs/GaAs Quantum Well with Ferromagnetism

2009 ◽  
Vol 152-153 ◽  
pp. 283-286 ◽  
Author(s):  
V.A. Kulbachinskii ◽  
L. Shchurova
Keyword(s):  
Quantum Well ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Charge Carriers ◽  
Negative Magnetoresistance ◽  
Free Charge ◽  
Carrier Scattering ◽  
Diluted Magnetic ◽  
Mn Doped ◽  
The Magnetic Field

We have investigated the thermodynamic, transport and magnetotransport properties of free charge carriers in a diluted magnetic semiconductor with a quantum well InGaAs in the GaAs with δ-doped by C and Mn. In order to determine the density of the holes in a quantum well, we carried out thermodynamic calculations of the system of free holes, atoms Mn0 and ions Mn–. We calculated the temperature dependence of resistance and magnetoresistance of holes in the quantum well. The contributions of various scattering mechanisms of holes to the resistance were analyzed. The negative magnetoresistance are explained as the reduction of spin-flip scattering by aligning spins of the magnetic field.

scholarly journals Experimental and Modeling Study on the High-Performance p++-GaAs/n++-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1092
Author(s):  
Yudan Gou ◽  
Jun Wang ◽  
Yang Cheng ◽  
Yintao Guo ◽  
Xiao Xiao ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
High Efficiency ◽  
Tunnel Junctions ◽  
Peak Current Density ◽  
Co Doping ◽  
Trap Assisted Tunneling ◽  
Carrier Tunneling ◽  
High Concentrations ◽  
Ingaas Quantum Well

The development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations. We investigate silicon and tellurium co-doping of InGaAs quantum well inserts in p++-GaAs/n++-GaAs tunnel junctions and report a peak current density as high as 5839 A cm−2 with a series resistance of 5.86 × 10−5 Ω cm2. In addition, we discuss how device performance is affected by the growth temperature, thickness, and V/III ratio in the InGaAs layer. A simulation model indicates that the contribution of trap-assisted tunneling enhances carrier tunneling.

scholarly journals 830-nm InGaAs Quantum Well Lasers With Very Low Beam Divergence

2017 ◽  
Vol 9 (5) ◽  
pp. 1-8
Author(s):  
Bocang Qiu ◽  
Hai Martin Hu ◽  
Weimin Wang ◽  
James Ho ◽  
Wenbin Liu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Beam Divergence ◽  
Ingaas Quantum Well

Hybrid InGaAs quantum well–dots nanostructures for light-emitting and photo-voltaic applications

2015 ◽  
Vol 26 (38) ◽  
pp. 385202 ◽  
Author(s):  
S A Mintairov ◽  
N A Kalyuzhnyy ◽  
V M Lantratov ◽  
M V Maximov ◽  
A M Nadtochiy ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting ◽  
Photo Voltaic ◽  
Ingaas Quantum Well

GaAs‐InGaAs quantum‐well resonant‐tunneling switching device grown by molecular beam epitaxy

1994 ◽  
Vol 64 (20) ◽  
pp. 2685-2687 ◽  
Author(s):  
Wen‐Chau Liu ◽  
Der‐Feng Guo ◽  
Shiuh‐Ren Yih ◽  
Jing‐Tong Liang ◽  
Lih‐Wen Liah ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Switching Device ◽  
Ingaas Quantum Well

InGaAs quantum well-dots based GaAs subcell with enhanced photocurrent for multijunction GaInP/GaAs/Ge solar cells

2016 ◽  
Vol 32 (1) ◽  
pp. 015006 ◽  
Author(s):  
S A Mintairov ◽  
N A Kalyuzhnyy ◽  
M V Maximov ◽  
A M Nadtochiy ◽  
A E Zhukov
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Ingaas Quantum Well

Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers

1994 ◽  
Vol 30 (2) ◽  
pp. 424-440 ◽  
Author(s):  
M. Chand ◽  
S.N.G. Chu ◽  
N.K. Dutta ◽  
J. Lopata ◽  
M. Geva ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
Quantum Well Lasers ◽  
Fiber Amplifiers ◽  
Erbium Doped ◽  
Ingaas Quantum Well
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