Carrier Localization and Decay in Wide-band-gap AlGaN∕AlGaN Quantum Wells

2010 ◽  
Author(s):  
G. Tamulaitis ◽  
J. Mickevičius ◽  
K. Kazlauskas ◽  
A. Žukauskas ◽  
E. Kuokštis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Wide Band ◽  
Carrier Localization ◽  
Wide Band Gap

Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum wells

2007 ◽  
Vol 244 (5) ◽  
pp. 1727-1734 ◽  
Author(s):  
H. Haratizadeh ◽  
B. Monemar ◽  
Plamen P. Paskov ◽  
Per Olof Holtz ◽  
E. Valcheva ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Wide Band ◽  
Optical Observation ◽  
Wide Band Gap

Growth and Optical Properties of Novel Wide-Band-Gap Strained-Layer Single Quantum Wells: Zn1-yCdySe/ZnSxSe1-x

1991 ◽  
Vol 30 (Part 2, No. 4A) ◽  
pp. L555-L557 ◽  
Author(s):  
Yi-hong Wu ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Band Gap ◽  
Wide Band ◽  
Single Quantum ◽  
Wide Band Gap ◽  
Strained Layer

scholarly journals High-temperature Mott transition in wide-band-gap semiconductor quantum wells

2014 ◽  
Vol 90 (20) ◽  
Author(s):  
G. Rossbach ◽  
J. Levrat ◽  
G. Jacopin ◽  
M. Shahmohammadi ◽  
J.-F. Carlin ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Band Gap ◽  
Wide Band ◽  
Mott Transition ◽  
Wide Band Gap ◽  
Semiconductor Quantum Wells

Carrier dynamics in wide-band-gap AlGaN/AlGaN quantum wells

2008 ◽  
Vol 5 (6) ◽  
pp. 2096-2098
Author(s):  
G. Tamulaitis ◽  
J. Mickevičius ◽  
E. Kuokštis ◽  
K. Liu ◽  
M. S. Shur ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Wide Band ◽  
Carrier Dynamics ◽  
Wide Band Gap

Optical spectroscopy of AlGaInP based wide band gap quantum wells

1994 ◽  
Vol 15 (3) ◽  
pp. 313 ◽  
Author(s):  
D.J. Mowbray ◽  
O.P. Kowalski ◽  
M.S. Skolnick ◽  
M. Hopkinson ◽  
J.P.R. David
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Optical Spectroscopy ◽  
Wide Band ◽  
Wide Band Gap

Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum wells [phys. stat. sol. (b) 244, No. 5, 1727–1734 (2007)]

2007 ◽  
Vol 244 (12) ◽  
pp. 4691-4691
Author(s):  
H. Haratizadeh ◽  
B. Monemar ◽  
Plamen P. Paskov ◽  
Per Olof Holtz ◽  
E. Valcheva ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Wide Band ◽  
Optical Observation ◽  
Wide Band Gap

On the Burste In-Moss Shift in Quantum Confined Wide-Band Gap Semiconductors

1992 ◽  
Vol 242 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
Badal De
Keyword(s):  
Quantum Dots ◽  
Theoretical Analysis ◽  
Quantum Wells ◽  
Band Gap ◽  
Electron Concentration ◽  
Wide Band ◽  
Experimental Results ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
Wide Gap

ABSTRACTWe study the Burstein-Moss shift (BMS) in quantum wiies and quantum dots of wide-gap semiconductors, taking Ge as an example, it is found that the BMS increases with increasing electron concentration in a ladder like manner. The numerical values of the BMS is greatest in quantum dots and least in quantum wells. The theoretical analysis is in agreement with the experimental results as given elsewhere.

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