Temperature and excitation power dependent photoluminescence intensity of GaInN quantum wells with varying charge carrier wave function overlap

2010 ◽  
Vol 107 (3) ◽  
pp. 033510 ◽  
Author(s):  
C. Netzel ◽  
V. Hoffmann ◽  
T. Wernicke ◽  
A. Knauer ◽  
M. Weyers ◽  
...  
Keyword(s):  
Wave Function ◽  
Charge Carrier ◽  
Quantum Wells ◽  
Excitation Power ◽  
Photoluminescence Intensity ◽  
Carrier Wave

Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN quantum wells

2010 ◽  
Vol 7 (7-8) ◽  
pp. 1872-1874
Author(s):  
Carsten Netzel ◽  
Veit Hoffmann ◽  
Tim Wernicke ◽  
Arne Knauer ◽  
Markus Weyers ◽  
...  
Keyword(s):  
Wave Function ◽  
Charge Carrier ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Carrier Wave ◽  
Low Charge

Correlation Between Photoluminescence Spectral Features and Crystal Growth Temperature for Sige Single Quantum Wells

1995 ◽  
Vol 379 ◽  
Author(s):  
M. Gerling ◽  
S. Nilsson ◽  
H. P. Zeindl ◽  
U. Jagdhold
Keyword(s):  
Diffusion Process ◽  
Quantum Wells ◽  
Growth Temperature ◽  
Surface Segregation ◽  
Excitation Power ◽  
Activation Energies ◽  
Photoluminescence Intensity ◽  
Single Quantum ◽  
Different Temperatures ◽  
Site Exchange

ABSTRACTSample temperature dependence and excitation power dependence of the photoluminescence intensity were investigated with respect to growth temperature for SiGe single quantum wells grown pseudomorphically to (100)-oriented Si by molecular beam epitaxy. The determined excitation power exponents and thermal activation energies show unambiguously that defect incorporation is effectively reduced at higher growth temperatures. However, at higher growth temperatures the SiGe-related spectral distribution is found to be shifted to higher photon energy which is attributed to intermixing of Ge and Si at the heterointerfaces, governed by diffusion as well as Ge surface segregation during growth. The diffusion process is studied separately by photoluminescence measurements upon thermal annealing at different temperatures and a diffusion model is presented where the diffusion process is assumed to be composed of two different mechanisms, interdiffusion, i.e. lattice-site-exchange diffusion, and point-defectinduced diffusion. The determined activation energies for the two diffusion mechanisms are in good agreement with previous results which confirm that the model gives a realistic picture of the diffusion process.

CARRIER CAPTURE IN SEMICONDUCTOR QUANTUM WELL LASERS: A QUANTUM TRANSPORT ANALYSIS

1998 ◽  
Vol 09 (04) ◽  
pp. 1211-1233 ◽  
Author(s):  
LEONARD F. REGISTER
Keyword(s):  
Wave Function ◽  
Quantum Wells ◽  
Quantum Transport ◽  
Golden Rule ◽  
Carrier Wave ◽  
Carrier Capture ◽  
The Past ◽  
Semiconductor Quantum Wells ◽  
Semiconductor Quantum Well ◽  
Transport Analysis

A quantum transport-based analysis of the essential physics of carrier capture in semiconductor quantum wells is presented. First, the past progression of models of carrier capture by quantum wells is briefly reviewed. Then carrier capture is modeled using the Schrödinger Equation Monte Carlo (SEMC) quantum transport simulator. In addition to reproducing familiar effects, these simulations exhibit significant effects associated with partial phase-coherence of the carrier wave-function across the well which cannot be modeled via classical or perturbative Golden Rule calculations, and address fundamental transport limitations often overlooked in Golden Rule calculations. However, this analysis also points to simple changes that could significantly improve, although not perfect, the treatment of carrier capture via these latter more conventional approaches.

Correlation of Electrical, Structural, and Optical Properties of Erbium In Silicon

1993 ◽  
Vol 301 ◽  
Author(s):  
J. L. Benton ◽  
D. J. Eaglesham ◽  
M. Almonte ◽  
P. H. Citrin ◽  
M. A. Marcus ◽  
...  
Keyword(s):  
Root Function ◽  
Free Exciton ◽  
Excitation Power ◽  
Optically Active ◽  
Photoluminescence Intensity ◽  
Square Root ◽  
Structural And Optical Properties ◽  
X Ray ◽  
X Ray Absorption ◽  
Donor Activity

ABSTRACTAn understanding of the electrical, structural, and optical properites of Er in Si is necessary to evaluate this system as an opto-electronic material. Extended x-ray absorption fine structure, EXAFS, measurements of Er-implanted Si show that the optically active impurity complex is Er surrounded by an O cage of 6 atoms. The Er photoluminescence intensity is a square root function of excitation power, while the free exciton intensity increases linearly. The square root dependence of the 1.54μm-intensity is independent of measurement temperature and independent of co-implanted species. Ion-implantation of Er in Si introduces donor activity, but spreading resistance carrier concentration profiles indicate that these donors do not effect the optical activity of the Er.

Optical Study of Localized and Delocalized States in GaAsN/GaAs

2003 ◽  
Vol 798 ◽  
Author(s):  
Z. Y. Xu ◽  
X. D. Luo ◽  
X. D. Yang ◽  
P. H. Tan ◽  
C. L. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Rapid Thermal Annealing ◽  
Short Pulse ◽  
Selective Excitation ◽  
Excitation Power ◽  
Pulse Excitation ◽  
Optical Study ◽  
Time Resolved ◽  
Exciton Localization ◽  
Time Resolved Photoluminescence

ABSTRACTTaking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

Studying Superconducting Granular Aluminum with Microwaves: An Apprenticeship

1990 ◽  
Vol 195 ◽  
Author(s):  
K. Alex MÜller
Keyword(s):  
Wave Function ◽  
Substantial Part ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Scientific Career ◽  
Carrier Wave ◽  
Spin Resonance ◽  
Paramagnetic Ions ◽  
Electron Paramagnetic ◽  
Granular Aluminum

A substantial part of my scientific career has been devoted to using the methods of electron paramagnetic (EPR) and electron spin resonance (ESR) in solids. The former describe investigations of microwave transitions between Zeeman levels of paramagnetic ions, whereas the latter indicate transitions between nearly free, but stationary spins in radicals and semiconductors as well as itinerant carriers in semimetals and metals. As early as 1962 an ESR study in intercalated graphites was undertaken in the latter. ESR was observed in C8K, C24K and C28Rb, but not in C8Rb, C8Cs and C24Cs [1]. From the observed linewidths, which are larger for heavier alkali intercalates with larger spin-orbit coupling, it was concluded that the carrier wave function was composed not only of carbon π but also of alkali-metal s orbitals, as theories later corroborated.

UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells

2002 ◽  
Vol 722 ◽  
Author(s):  
Mee-Yi Ryu ◽  
C. Q. Chen ◽  
E. Kuokstis ◽  
J. W. Yang ◽  
G. Simin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Excitation Power Density ◽  
Light Emitting ◽  
Uv Emission ◽  
Alloy Disorder

AbstractWe present the results on investigation and analysis of photoluminescence (PL) dynamics of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a novel pulsed metalorganic chemical vapor deposition (PMOCVD). The emission peaks in both AlInGaN epilayers and MQWs show a blueshift with increasing excitation power density. The PL emission of quaternary samples is attributed to recombination of carriers/excitons localized at band-tail states. The PL decay time increases with decreasing emission photon energy, which is a characteristic of localized carrier/exciton recombination due to alloy disorder. The obtained properties of AlInGaN materials grown by a PMOCVD are similar to those of InGaN. This indicates that the AlInGaN system is promising for ultraviolet applications such as the InGaN system for blue light emitting diode and laser diode applications.

scholarly journals Mobility Enhancement in Square Quantum Wells: Symmetric Modulation of the Envelop Wave Function

2010 ◽  
Vol 20 (3) ◽  
pp. 193
Author(s):  
Doan Nhat Quang ◽  
Nguyen Huyen Tung ◽  
Nguyen Trung Hong ◽  
Tran Thi Hai
Keyword(s):  
Experimental Data ◽  
Wave Function ◽  
Low Temperature ◽  
Quantum Wells ◽  
Quantum Transport ◽  
Variational Approach ◽  
Theoretical Study ◽  
Recent Experimental Data ◽  
Carrier Distribution ◽  
Analytic Expressions

We present a theoretical study of the effects from symmetric modulation of the envelop wave function on quantum transport in square quantum wells (QWs). Within the variational approach we obtain analytic expressions for the carrier distribution and their scattering in symmetric two-side doped square QWs. Roughness-induced scattering are found significantly weaker than those in the asymmetric one-side doped counterpart. Thus, we propose symmetric modulation of the wave function as an efficient method for enhancement of the roughness-limited QW mobility. Our theory is able to well reproduce the recent experimental data about low-temperature transport of electrons and holes in two-side doped square QWs, e.g., the mobility dependence on the channel width, which have not been explained so far.

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