Misfit dislocations and the morphology of gallium aluminum arsenide epitaxial layers grown on gallium arsenide

1981 ◽  
Vol 52 (6) ◽  
pp. 4328-4329 ◽  
Author(s):  
H. Booyens ◽  
M. B. Small ◽  
R. M. Potemski ◽  
J. H. Basson
Keyword(s):  
Gallium Arsenide ◽  
Aluminum Arsenide ◽  
Epitaxial Layers ◽  
Misfit Dislocations ◽  
Gallium Aluminum Arsenide

An homogeneous growth model of gallium arsenide epitaxial layers from the gas phase

1989 ◽  
Vol 54 (11) ◽  
pp. 2933-2950
Author(s):  
Emerich Erdös ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Experimental Data ◽  
Gallium Arsenide ◽  
Kinetic Study ◽  
Gas Phase ◽  
Growth Model ◽  
Epitaxial Layers ◽  
Inhomogeneous Model ◽  
Homogeneous Models ◽  
Active Centres

This paper represents a continuation and ending of the kinetic study of the gallium arsenide formation, where a so-called inhomogeneous model is proposed and quantitatively formulated in five variants, in which two kinds of active centres appear. This model is compared both with the experimental data and with the previous sequence of homogeneous models.

Isothermal growth of epitaxial layers of gallium arsenide from stirred gallium solutions

1976 ◽  
Vol 32 (1) ◽  
pp. 93-99
Author(s):  
F.A. Kuznetsov ◽  
S.T. Tchistanova ◽  
L.A. Borisova ◽  
V.I. Kosyakov ◽  
A.N. Dorohov
Keyword(s):  
Gallium Arsenide ◽  
Epitaxial Layers ◽  
Isothermal Growth
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