SiGe Integrated Circuit∕SQUID Hybrid Cryogenic Multiplexer for Superconducting Bolometer Array

Author(s):  
D. Pre^le ◽  
F. Voisin ◽  
R. Oger ◽  
C. Chapron ◽  
E. Bréelle ◽  
...  
2006 ◽  
Author(s):  
Adam L. Woodcraft ◽  
Peter A. R. Ade ◽  
Dan Bintley ◽  
Cynthia L. Hunt ◽  
Rashmi V. Sudiwala ◽  
...  

2004 ◽  
Author(s):  
Dominic J. Benford ◽  
Simon R. Dicker ◽  
Edward J. Wollack ◽  
Mark P. Supanich ◽  
Johannes G. Staguhn ◽  
...  

2008 ◽  
Author(s):  
Dominic J. Benford ◽  
Johannes G. Staguhn ◽  
Christine A. Allen ◽  
Elmer H. Sharp

2003 ◽  
Author(s):  
Dominic J. Benford ◽  
George M. Voellmer ◽  
James A. Chervenak ◽  
Kent D. Irwin ◽  
S. H. Moseley ◽  
...  

2003 ◽  
Author(s):  
Dominic J. Benford ◽  
James A. Chervenak ◽  
Kent D. Irwin ◽  
S. H. Moseley, Jr. ◽  
Richard A. Shafer ◽  
...  

2006 ◽  
Author(s):  
Adam L. Woodcraft ◽  
Matthew I. Hollister ◽  
Dan Bintley ◽  
Maureen A. Ellis ◽  
Xiaofeng Gao ◽  
...  

2006 ◽  
Author(s):  
Dominic J. Benford ◽  
Johannes G. Staguhn ◽  
Troy J. Ames ◽  
Christine A. Allen ◽  
James A. Chervenak ◽  
...  

2007 ◽  
Vol 78 (2) ◽  
pp. 024502 ◽  
Author(s):  
Adam L. Woodcraft ◽  
Peter A. R. Ade ◽  
Dan Bintley ◽  
Julian S. House ◽  
Cynthia L. Hunt ◽  
...  

2003 ◽  
Vol 16 (12) ◽  
pp. 1430-1433 ◽  
Author(s):  
T May ◽  
V Zakosarenko ◽  
R Boucher ◽  
E Kreysa ◽  
H-G Meyer

Author(s):  
R. M. Anderson

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.


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