Effect of pyrolytic Al2O3deposition temperature on inversion‐mode InP metal‐insulator‐semiconductor field–effect transistor

Takeshi Kobayashi; Masamichi Okamura; Eiichi Yamaguchi; Yukinobu Shinoda; Yukihiro Hirota

doi:10.1063/1.328593

Effect of pyrolytic Al2O3deposition temperature on inversion‐mode InP metal‐insulator‐semiconductor field–effect transistor

Journal of Applied Physics ◽

10.1063/1.328593 ◽

1981 ◽

Vol 52 (10) ◽

pp. 6434-6436 ◽

Cited By ~ 42

Author(s):

Takeshi Kobayashi ◽

Masamichi Okamura ◽

Eiichi Yamaguchi ◽

Yukinobu Shinoda ◽

Yukihiro Hirota

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Inversion Mode ◽

Effect Transistor

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InGaAsPn‐channel inversion‐mode metal‐insulator‐semiconductor field‐effect transistor with low interface state density

Journal of Applied Physics ◽

10.1063/1.328582 ◽

1981 ◽

Vol 52 (10) ◽

pp. 6386-6394 ◽

Cited By ~ 28

Author(s):

Yukinobu Shinoda ◽

Takeshi Kobayashi

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Inversion Mode ◽

Effect Transistor

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The gas sensitivity of a metal-insulator-semiconductor field-effect-transistor based on Langmuir–Blodgett films of a new asymmetrically substituted phthalocyanine

Thin Solid Films ◽

10.1016/s0040-6090(99)01081-0 ◽

2000 ◽

Vol 360 (1-2) ◽

pp. 256-260 ◽

Cited By ~ 39

Author(s):

Wenping Hu ◽

Yunqi Liu ◽

Yu Xu ◽

Shenggao Liu ◽

Shuqin Zhou ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gas Sensitivity ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Langmuir Blodgett ◽

Langmuir Blodgett Films ◽

Effect Transistor

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TCAD simulation of a breakdown-enhanced double channel GaN metal–insulator–semiconductor field-effect transistor with a P-buried layer

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab81b3 ◽

2020 ◽

Vol 35 (6) ◽

pp. 065012

Author(s):

Xin-Xing Fei ◽

Ying Wang ◽

Xin Luo ◽

Meng-Tian Bao ◽

Cheng-Hao Yu

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor ◽

Buried Layer ◽

Tcad Simulation ◽

Double Channel

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Monolithic integration of a very low threshold GaInAsP laser and metal‐insulator‐semiconductor field‐effect transistor on semi‐insulating InP

Applied Physics Letters ◽

10.1063/1.93226 ◽

1982 ◽

Vol 40 (8) ◽

pp. 643-645 ◽

Cited By ~ 29

Author(s):

U. Koren ◽

K. L. Yu ◽

T. R. Chen ◽

N. Bar‐Chaim ◽

S. Margalit ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Low Threshold ◽

Effect Transistor

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A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor

Semiconductor Science and Technology ◽

10.1088/0268-1242/16/12/309 ◽

2001 ◽

Vol 16 (12) ◽

pp. 997-1001 ◽

Cited By ~ 23

Author(s):

Kun-Wei Lin ◽

Chin-Chuan Cheng ◽

Shiou-Ying Cheng ◽

Kuo-Hui Yu ◽

Chih-Kai Wang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Hydrogen Sensor ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor

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Surface state density distribution at an Al2O3‐InP metal‐insulator‐semiconductor field‐effect transistor measured by the charge pumping technique

Applied Physics Letters ◽

10.1063/1.97612 ◽

1986 ◽

Vol 49 (6) ◽

pp. 351-353 ◽

Cited By ~ 5

Author(s):

Takeshi Kobayashi ◽

Tohru Ichikawa ◽

Tetsurou Sawai

Keyword(s):

Density Distribution ◽

Surface State ◽

Field Effect ◽

Field Effect Transistor ◽

State Density ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Charge Pumping ◽

Surface State Density ◽

Effect Transistor

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Normally-off fully recess-gated GaN metal–insulator–semiconductor field-effect transistor using Al2O3/Si3N4 bilayer as gate dielectrics

Applied Physics Express ◽

10.7567/apex.10.106502 ◽

2017 ◽

Vol 10 (10) ◽

pp. 106502 ◽

Cited By ~ 6

Author(s):

Hongyue Wang ◽

Jinyan Wang ◽

Jingqian Liu ◽

Mengjun Li ◽

Yandong He ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor

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GaAs power metal-insulator-semiconductor field effect transistor with superlattice gate insulator and superlattice buffer structure

Thin Solid Films ◽

10.1016/0040-6090(90)90284-k ◽

1990 ◽

Vol 188 (2) ◽

pp. 213-218

Author(s):

W.C. Liu ◽

W.S. Lour ◽

C.Y. Sun

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Insulator ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor ◽

Buffer Structure

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A Pt–Ti–O gate Si-metal-insulator-semiconductor field-effect transistor hydrogen gas sensor

Journal of Applied Physics ◽

10.1063/1.3483942 ◽

2010 ◽

Vol 108 (7) ◽

pp. 074909 ◽

Cited By ~ 14

Author(s):

Toshiyuki Usagawa ◽

Yota Kikuchi

Keyword(s):

Gas Sensor ◽

Field Effect ◽

Field Effect Transistor ◽

Hydrogen Gas ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor

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Electrical Properties of Al/CaF2/i-Diamond Metal-Insulator-Semiconductor Field-Effect-Transistor Fabricated by Ultrahigh Vacuum Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l1293 ◽

1998 ◽

Vol 37 (Part 2, No. 11A) ◽

pp. L1293-L1296 ◽

Cited By ~ 13

Author(s):

Young Yun ◽

Tetsuro Maki ◽

Hiroyuki Tanaka ◽

Yusuke Shirakawa ◽

Takeshi Kobayashi

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Field Effect Transistor ◽

Ultrahigh Vacuum ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Effect Transistor

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