Vertical solar cell and internal electric field

1981 ◽  
Vol 52 (10) ◽  
pp. 6347-6351 ◽  
Author(s):  
Yu‐Tung Yang
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Internal Electric Field

scholarly journals Investigation of the Carrier Movement through the Tunneling Junction in the InGaP/GaAs Dual Junction Solar Cell Using the Electrically and Optically Biased Photoreflectance Spectroscopy

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 638
Author(s):  
Sanam SaeidNahaei ◽  
Hyun-Jun Jo ◽  
Sang Jo Lee ◽  
Jong Su Kim ◽  
Sang Jun Lee ◽  
...  
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Electric Fields ◽  
Bias Voltage ◽  
Tunnel Junction ◽  
Photogenerated Carrier ◽  
Internal Electric Field ◽  
Junction Solar Cell ◽  
Photoreflectance Spectroscopy ◽  
Dc Bias

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n junction electric fields (Fpn) was perturbed by the external DC bias voltage and CW light intensity for EBPR and OBPR experiments, respectively. Moreover, the Fpn was evaluated using the Fast Fourier Transform (FFT) of the Franz—Keldysh oscillation from PR spectra. In the EBPR, the electric field decreased by increasing the DC bias voltage, which also decreased the potential barrier. In OBPR, when incident CW light is absorbed by the top cell, the decrement of the Fpn in the GaAs cell indicates that the photogenerated carriers are accumulated near the p-n junction. Photogenerated carriers in InGaP can pass through the tunnel junction, and the PR results show the contribution of the modification of the electric field by the photogenerated carriers in each cell. We suggest that PR spectroscopy with optical-bias and electrical-bias could be analyzed using the information of the photogenerated carrier passed through the tunnel junction.

Internal Electric Field in Light-Degraded p-i-n a-Si:H Solar Cells

1993 ◽  
Vol 297 ◽  
Author(s):  
Franc Smole ◽  
JoŽe Furlan ◽  
Marko TopiČ
Keyword(s):  
Computer Simulation ◽  
Solar Cell ◽  
Electric Field ◽  
Cell Structure ◽  
Internal Electric Field ◽  
Continuity Equations ◽  
Solar Cell Structure ◽  
Small Intensity ◽  
Monochromatic Illumination ◽  
Complex Density

Based on results of a-Si:H solar cell computer simulation solving numerically the Poisson, transport and continuity equations, using a rather complex density of states distribution being in agreement with experimental observations, shows that light-soaking degradation can be attributed to both, light induced effects in heterojunction region and to changes in the i-layer, which together tend to reduce the built-in electric field inside of the i-region. Measurements of spectral sensitivity using small intensity monochromatic illumination in combination with an accurate computer analysis provides the possibility of ascertaining which of the degrading effects is the dominating one in a particular a-Si:H solar cell structure.

Internal Electric Field and Photocurrent of Polymer/Perylene Heterojunction Solar Cell

2007 ◽  
Vol 46 (11) ◽  
pp. 7241-7246 ◽  
Author(s):  
Ichiro Hiromitsu ◽  
Shin-ichiro Mada ◽  
Ayumi Inoue ◽  
Yuki Yoshida ◽  
Senku Tanaka
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Heterojunction Solar Cell ◽  
Internal Electric Field

INTERFACE CHARACTERISATION AND INTERNAL ELECTRIC FIELD EVALUATION OF a-Si:H PIN SOLAR CELL BY VARIABLE ENERGY POSITRON ANNIHILATION SPECTROSCOPY

1998 ◽  
Vol 507 ◽  
Author(s):  
X. Zou ◽  
Y. C. Chan ◽  
D. P. Webb ◽  
Y. W. Lam ◽  
F. Y. M. Chan ◽  
...  
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Positron Annihilation ◽  
Field Evaluation ◽  
Positron Annihilation Spectroscopy ◽  
Uniform Density ◽  
Electric Field Effect ◽  
Internal Electric Field ◽  
Single Junction ◽  
Variable Energy

ABSTRACTBy means of the slow positron beam Doppler-broadening technique, the depth profile of microvoids across a p-i-n double junction solar cell has been resolved. VEPFIT fitting results indicate an approximately uniform density of the defects throughout the solar cell, but with an enhanced concentration at all of the interfaces possibly due to network mismatch. In order to evaluate the internal electric field, Variable Energy Positron Annihilation Spectroscopy (VEPAS) measurements have been performed on a single junction pin solar cell at different biases. The internal electric field effect on positrons has also been examined in terms of the bias dependence of positron drift in a-Si:H single junction pin solar cell.

Radiated Electric Field from a Solar Cell Module Set on the Ground Plane

2010 ◽  
Vol 130 (8) ◽  
pp. 724-732
Author(s):  
Ryosuke Hasegawa ◽  
Mariko Tomisawa ◽  
Masamitsu Tokuda
Keyword(s):  
Solar Cell ◽  
Electric Field ◽  
Ground Plane ◽  
Cell Module ◽  
Solar Cell Module
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