The effect of substrate growth temperature on deep levels inn‐AlxGa1−xAs grown by molecular beam epitaxy

1981 ◽  
Vol 52 (10) ◽  
pp. 6165-6167 ◽  
Author(s):  
S. R. McAfee ◽  
W. T. Tsang ◽  
D. V. Lang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Deep Levels

Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy

2003 ◽  
Vol 93 (11) ◽  
pp. 9104-9110 ◽  
Author(s):  
Sung-Yong Chung ◽  
Niu Jin ◽  
Anthony T. Rice ◽  
Paul R. Berger ◽  
Ronghua Yu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Deep Levels ◽  
Species Effects

Activation of two dopants, Bi and Er in δ-doped layer in Si crystal

Nano Futures ◽  
2021 ◽  
Vol 5 (4) ◽  
pp. 045005
Author(s):  
Koichi Murata ◽  
Shuhei Yagi ◽  
Takashi Kanazawa ◽  
Satoshi Tsubomatsu ◽  
Christopher Kirkham ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Silicon Crystal ◽  
Electric Transport ◽  
Photoluminescence Study ◽  
Post Annealing ◽  
Surface Nanostructures ◽  
Doping Technique ◽  
Dopant Source

Abstract Conventional doping processes are no longer viable for realizing extreme structures, such as a δ-doped layer with multiple elements, such as the heavy Bi, within the silicon crystal. Here, we demonstrate the formation of (Bi + Er)-δ-doped layer based on surface nanostructures, i.e. Bi nanolines, as the dopant source by molecular beam epitaxy. The concentration of both Er and Bi dopants is controlled by adjusting the amount of deposited Er atoms, the growth temperature during Si capping and surfactant techniques. Subsequent post-annealing processing is essential in this doping technique to obtain activated dopants in the δ-doped layer. Electric transport measurement and photoluminescence study revealed that both Bi and Er dopants were activated after post-annealing at moderate temperature.

scholarly journals Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

2008 ◽  
Vol 104 (8) ◽  
pp. 083510 ◽  
Author(s):  
S. Fernández-Garrido ◽  
A. Redondo-Cubero ◽  
R. Gago ◽  
F. Bertram ◽  
J. Christen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Mole Fraction ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Nitride Layers

Study of nitrogen incorporation into GaInNAs: The role of growth temperature in molecular beam epitaxy

2012 ◽  
Vol 112 (2) ◽  
pp. 023504 ◽  
Author(s):  
V.-M. Korpijärvi ◽  
A. Aho ◽  
P. Laukkanen ◽  
A. Tukiainen ◽  
A. Laakso ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Nitrogen Incorporation

Deep levels in GaAs grown by atomic layer molecular beam epitaxy

1994 ◽  
Vol 65 (22) ◽  
pp. 2848-2850 ◽  
Author(s):  
E. Gombia ◽  
R. Mosca ◽  
A. Bosacchi ◽  
M. Madellaf ◽  
S. Franchi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Deep Levels
Sign in / Sign up

Export Citation Format

Share Document