Sn incorporation and electron concentration in vapor‐phase epitaxially grown GaAs

1981 ◽  
Vol 52 (1) ◽  
pp. 342-343 ◽  
Author(s):  
M. Maier ◽  
B. Hanel ◽  
P. Balk
Keyword(s):  
Vapor Phase ◽  
Electron Concentration

Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
R.Y. Korotkov ◽  
B.W. Wessels
Keyword(s):  
Experimental Data ◽  
Electrical Properties ◽  
Vapor Phase ◽  
Electron Concentration ◽  
Formation Energy ◽  
Shallow Donor ◽  
Square Root ◽  
Compensation Ratio ◽  
Pressure Oxygen ◽  
Hall Effect Measurements

AbstractDeliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of Θ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

Crystal Surface Stoichiometry and the Fermi Level Effects on Outdiffusion of Si in GaAs

1992 ◽  
Vol 282 ◽  
Author(s):  
Horng-Ming You ◽  
Ulrich M. GöSele ◽  
Teh Yu Tan
Keyword(s):  
Fermi Level ◽  
Vapor Phase ◽  
Electron Concentration ◽  
Crystal Surface ◽  
Capacitance Voltage ◽  
Phase Pressure

ABSTRACTGaAs samples doped with Si to a concentration of ∼2.7×10 18cm−3 were annealed at temperatures between 800 and 1000°C for 3 to 20 hours under As-rich and As-poor conditions for Si outdiffusion which were then measured using the capacitance-voltage method employing an electrochemical profiler. The deduced Si diffusivity showed strong dependencies on the As4 vapor phase pressure, PAs4 and on the electron concentration, n. When reduced to that under intrinsic conditions, activation enthalpies of 3.91 eV and 4.19 eV were obtained for As-rich and As-poor annealing cases, respectively. From these results, it is concluded that Si outdiffusion in GaAs is governed by the triply-negatively-charged Ga vacancies, .

scholarly journals Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 301-307 ◽  
Author(s):  
R.Y. Korotkov ◽  
B.W. Wessels
Keyword(s):  
Experimental Data ◽  
Electrical Properties ◽  
Vapor Phase ◽  
Electron Concentration ◽  
Formation Energy ◽  
Shallow Donor ◽  
Square Root ◽  
Compensation Ratio ◽  
Pressure Oxygen ◽  
Hall Effect Measurements

Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of Θ = 0.3-0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

191. Planar Waveguide Interferometers for Vapor Phase Sensing

1999 ◽  
Author(s):  
C. Joseph ◽  
D. Campbell ◽  
J. Suggs ◽  
J. Moore ◽  
N. Hartman
Keyword(s):  
Vapor Phase ◽  
Planar Waveguide

"PURIFICATION EFFECTS" IN ZINC SELENIDE CRYSTALS DOPED WITH YTTERBIUM FROM VAPOR PHASE

2016 ◽  
Vol 75 (3) ◽  
pp. 279-284 ◽  
Author(s):  
V. P. Makhniy ◽  
O. V. Kinzersky ◽  
I. M. Senko
Keyword(s):  
Zinc Selenide ◽  
Vapor Phase

A New Condition of Formation and Stablity of All Crystalline Systems in a Good Agreement with Experimental Data

2015 ◽  
Vol 11 (3) ◽  
pp. 3224-3228
Author(s):  
Tarek El-Ashram
Keyword(s):  
Experimental Data ◽  
Brillouin Zone ◽  
Electron Concentration ◽  
Free Electron ◽  
Lattice Point ◽  
Valence Electron ◽  
Fermi Gas ◽  
Valence Electron Concentration ◽  
Fermi Sphere ◽  
Good Agreement

In this paper we derived a new condition of formation and stability of all crystalline systems and we checked its validity andit is found to be in a good agreement with experimental data. This condition is derived directly from the quantum conditionson the free electron Fermi gas inside the crystal. The new condition relates both the volume of Fermi sphere VF andvolume of Brillouin zone VB by the valence electron concentration VEC as ;𝑽𝑭𝑽𝑩= 𝒏𝑽𝑬𝑪𝟐for all crystalline systems (wheren is the number of atoms per lattice point).

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