scholarly journals Observation of reduced radiative recombination in low-well-number strain-balanced quantum well solar cells

2010 ◽  
Vol 107 (4) ◽  
pp. 044502 ◽  
Author(s):  
A. Bessière ◽  
J. P. Connolly ◽  
K. W. J. Barnham ◽  
M. F. Führer ◽  
M. Lynch ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Radiative Recombination

scholarly journals Analytical Models of Bulk and Quantum Well Solar Cells and Relevance of the Radiative Limit

2012 ◽  
pp. 59-77 ◽  
Author(s):  
James P. Connolly
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Space Charge ◽  
Radiative Recombination ◽  
Light Trapping ◽  
Open Circuit ◽  
Analytical Models ◽  
Injection Currents ◽  
Photon Recycling ◽  
Open Circuit Voltages

The analytical modelling of bulk and quantum well solar cells is reviewed. The analytical approach allows explicit estimates of dominant generation and recombination mechanisms at work in charge neutral and space charge layers of the cells. Consistency of the analysis of cell characteristics in the light and in the dark leaves a single free parameter, which is the mean Shockley-Read-Hall lifetime. Bulk PIN cells are shown to be inherently dominated by non-radiative recombination as a result of the doping related non-radiative fraction of the Shockley injection currents. Quantum well PIN solar cells on the other hand are shown to operate in the radiative limit as a result of the dominance of radiative recombination in the space charge region. These features are exploited using light trapping techniques leading to photon recycling and reduced radiative recombination. The conclusion is that the mirror backed quantum well solar cell device features open circuit voltages determined mainly by the higher bandgap neutral layers, with an absorption threshold determined by the lower gap quantum well superlattice.

Radiative recombination in strain-balanced quantum well solar cells

2005 ◽  
Author(s):  
A. Bessiere ◽  
J.P. Connolly ◽  
K.W.J. Barnham ◽  
I.M. Ballard ◽  
D.C. Johnson ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Radiative Recombination

Evidence of Sequential Carrier Escape in III-V p-i-n Multi-Quantum Well Solar Cells

2007 ◽  
Vol 1031 ◽  
Author(s):  
Andenet Alemu ◽  
Jose A. H. Coaquira ◽  
Alex Freundlich
Keyword(s):  
Activation Energy ◽  
Solar Cells ◽  
Quantum Well ◽  
Quantum Wells ◽  
Effective Potential ◽  
Radiative Recombination ◽  
Energy Levels ◽  
Photoluminescence Intensity ◽  
Carrier Escape ◽  
Multi Quantum Well

AbstractSeveral InAsP/InP p-i-n Multi-Quantum Well (MQW) solar cells, only differing by their MQW region composition and geometry, were investigated. For each sample, the Arrhenius plot of the temperature related variation of the photoluminescence intensity was used to deduce the radiative recombination activation energy. The electron and holes confinement energy levels in the quantum wells and the associated effective potential barriers seen by each carrier were theoretically calculated. Carrier escape times were also estimated for each carrier. The fastest escaping carrier is found to display an effective potential energy barrier equal to the experimentally determined photoluminescence activation energy. This not only shows that the temperature related radiative recombination extinction process is driven by the carrier escape mechanism but also that the carriers escape process is sequential. Moreover, a discrepancy in device performance is directly correlated to the nature of the fastest escaping carrier.

scholarly journals Analytical Models of Bulk and Quantum Well Solar Cells and Relevance of the Radiative Limit

2014 ◽  
pp. 1195-1212
Author(s):  
James P. Connolly
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Space Charge ◽  
Radiative Recombination ◽  
Light Trapping ◽  
Open Circuit ◽  
Analytical Models ◽  
Injection Currents ◽  
Photon Recycling ◽  
Open Circuit Voltages

The analytical modelling of bulk and quantum well solar cells is reviewed. The analytical approach allows explicit estimates of dominant generation and recombination mechanisms at work in charge neutral and space charge layers of the cells. Consistency of the analysis of cell characteristics in the light and in the dark leaves a single free parameter, which is the mean Shockley-Read-Hall lifetime. Bulk PIN cells are shown to be inherently dominated by non-radiative recombination as a result of the doping related non-radiative fraction of the Shockley injection currents. Quantum well PIN solar cells on the other hand are shown to operate in the radiative limit as a result of the dominance of radiative recombination in the space charge region. These features are exploited using light trapping techniques leading to photon recycling and reduced radiative recombination. The conclusion is that the mirror backed quantum well solar cell device features open circuit voltages determined mainly by the higher bandgap neutral layers, with an absorption threshold determined by the lower gap quantum well superlattice.

Effect of Back-Surface Reflectors on the Performance of Strain-Balanced Quantum Well Solar Cells

2008 ◽  
Author(s):  
Jessica Adams ◽  
Ravin Ginige ◽  
James Connolly ◽  
Ian Ballard ◽  
Benjamin Browne ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Back Surface

Analysis for non-radiative recombination and resistance losses in chalcopyrite and kesterite solar cells

2020 ◽  
Author(s):  
Masafumi YAMAGUCHI ◽  
HITOSHI TAMPO ◽  
Hajime SHIBATA ◽  
Kan-hua Lee ◽  
Kenji ARAKI ◽  
...  
Keyword(s):  
Solar Cells ◽  
Radiative Recombination

Electrical characteristics and hot carrier effects in quantum well solar cells

2017 ◽  
Author(s):  
Dac-Trung Nguyen ◽  
Laurent Lombez ◽  
Francois Gibelli ◽  
Myriam Paire ◽  
Soline Boyer-Richard ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Electrical Characteristics ◽  
Hot Carrier ◽  
Hot Carrier Effects
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