Formation of silicon nitride compound layers by high‐dose nitrogen implantation

1980 ◽  
Vol 51 (3) ◽  
pp. 1605-1610 ◽  
Author(s):  
T. Tsujide ◽  
M. Nojiri ◽  
H. Kitagawa
Keyword(s):  
Silicon Nitride ◽  
High Dose ◽  
Nitrogen Implantation

Buried Silicon-Nitride by High Temperature Nitrogen Implantation

1987 ◽  
Vol 107 ◽  
Author(s):  
U. Bussmann ◽  
F.H.J. Meerbach ◽  
E.H. Te Kaat
Keyword(s):  
High Temperature ◽  
Silicon Nitride ◽  
Electron Diffraction ◽  
Amorphous Material ◽  
Subsequent Annealing ◽  
High Dose ◽  
Nitrogen Implantation ◽  
Tem Analysis ◽  
Amorphous Si ◽  
Nitride Layers

AbstractBuried silicon nitride layers are formed by high temperature (600-800°C), high dose (0.3-1 x 1018 Ncm -2) nitrogen implantation into silicon. The nitride structure of as-implanted and annealed (6 h at 1200°C) samples is revealed by TEM-analysis. At implantation temperatures up to 600°C an amorphous SixN" layer is formed. At higher temperatures crystalline precipitates are found within an amorphous environment. They are identified as β-Si3N4 by electron diffraction. By subsequent annealing the previously amorphous material crystallizes to a-Si3N4, while the β-grains seem to be stable.

Comparison of Pulsed Laser and Furnace Annealing of Nitrogen Implanted Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
T. P. Smith ◽  
P. J. Stiles ◽  
W. M. Augustyniak ◽  
W. L. Brown ◽  
D. C. Jacobson ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Semiconductor Device ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Nitride Layer ◽  
High Dose ◽  
Infrared Transmission ◽  
Furnace Annealing

ABSTRACTFormation of buried insulating layers and redistribution of impurities during annealing are important processes in new semiconductor device technologies. We have studied pulsed ruby laser and furnace annealing of high dose (D>1017 N/cm2) 50 KeV nitrogen implanted silicon. Using He Back scattering and channeling, X-ray diffraction, transmission electron microscopy, and infrared transmission spectroscopy, we have compared liquid and solid phase regrowth, diffusion, impurity segregation and nitride formation. As has been previously reported, during furnace annealing at or above 1200C nitrogen redistributes and forms a polycrystalline silicon nitride (Si3N4 ) layer. [1–4] In contrast, pulsed laser annealing produces a buried amorphous silicon nitride layer filled with voids or bubbles below a layer of polycrystalline silicon.

scholarly journals High dose nitrogen implantation into chromium plates.

1988 ◽  
Vol 39 (10) ◽  
pp. 598-602 ◽  
Author(s):  
Takanobu FUJIHANA ◽  
Yoshio OKABE ◽  
Masaya IWAKI
Keyword(s):  
High Dose ◽  
Nitrogen Implantation

Defect Structure at Buried Silicon Nitride Layers

1985 ◽  
Vol 45 ◽  
Author(s):  
E.H. Te Kaat ◽  
J. Belz
Keyword(s):  
Silicon Nitride ◽  
Low Dose ◽  
Electronic Devices ◽  
High Dose ◽  
Local Defect ◽  
Defect Structures ◽  
Rectangular Profile ◽  
The Common ◽  
Nitride Layers ◽  
Spherulitic Structure

ABSTRACTBuried insulating silicon nitride layers are formed by a 400°C N+-implantation at 150 keV with fluences from 0.35 to 1×1018 N+/cm2 and subsequent anneal at 1200°C in dry nitrogen. TEM and AES measurements on bevelled samples yield a correlation of ion and damage profiles to local defect structures. Low dose implantation results in polycrystalline precipitates of scaled spherulitic structure. High dose continuous polycrystalline nitride layers have good insulation properties following a 5 hour anneal. During anneal, the common asymmetrical ion depth profile transforms to a nearly rectangular profile. The silicon surface layer contains 106 to 108 dislocations/cm2, which seem to be passivated, since detrimental effects on electronic devices have not been measured.

Structural properties of carbon nitride films prepared by high dose nitrogen implantation into carbon thin films

1996 ◽  
Vol 79 (5) ◽  
pp. 2364-2368 ◽  
Author(s):  
Huoping Xin ◽  
Chenglu Lin ◽  
W‐ping Xu ◽  
Lianwei Wang ◽  
Shichang Zou ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Carbon Nitride ◽  
High Dose ◽  
Nitrogen Implantation ◽  
Carbon Thin Films

Industrial Applications of Ion Implantation

1983 ◽  
Vol 27 ◽  
Author(s):  
J.K. Hirvoney
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Industrial Applications ◽  
The Other ◽  
High Dose ◽  
Nitrogen Implantation ◽  
Aqueous Corrosion ◽  
Wear Reduction ◽  
Ion Species ◽  
Corrosion And Oxidation

ABSTRACTThe use of ion implantation for non-semiconductor applications has evolved steadily over the last decade. To date, industrial trials of this technology have been mainly directed at the wear reduction of steel and cobalt-cemented tungsten carbide tools by high dose nitrogen implantation. However, several other surface sensitive properties of metals such as fatigue, aqueous corrosion, and oxidation, have benefitted from either i)direct ion implantation of various ion species, ii)the use of ion beams to “intermix” a deposited thin film on steel or titanium alloy substrates, or iii)the deposition of material in conjunction with simultaneous ion bombardment.This paper will concentrate on applications that have experienced the most industrial trials, mainly high dose nitrogen implantation for reducing wear, but will present the features of the other ion beam based techniques that will make them appear particularly promising for future commercial utilization.

scholarly journals Anomalous Nanoparticle Surface Diusion in Liquid Cell TEM is Revealed by Deep Learning-Assisted Analysis

2020 ◽  
Author(s):  
Vida Jamali ◽  
Cory Hargus ◽  
Assaf Ben Moshe ◽  
Amirali Aghazadeh ◽  
Hyun Dong Ha ◽  
...  
Keyword(s):  
Electron Beam ◽  
Silicon Nitride ◽  
Statistical Tests ◽  
Ionic Species ◽  
High Dose ◽  
Dose Rates ◽  
Silicon Nitride Membrane ◽  
Liquid Cell ◽  
Assisted Analysis ◽  
Beam Dose

The motion of nanoparticles near surfaces is of fundamental importance in physics, biology, and chemistry. Liquid cell transmission electron microscopy (LCTEM) is a promising technique for studying motion of nanoparticles with high spatial resolution. Yet, the lack of understanding of how the electron beam of the microscope affects the particle motion has held back advancement in using LCTEM for in situ single nanoparticle and macromolecule tracking at interfaces. Here, we experimentally studied the motion of a model system of gold nanoparticles dispersed in water and moving adjacent to the silicon nitride membrane of a commercial liquid cell in a broad range of electron beam dose rates. We find that the nanoparticles exhibit anomalous diffusive behavior modulated by the electron beam dose rate. We characterized the anomalous diffusion of nanoparticles in LCTEM using a convolutional deep neural network model and canonical statistical tests. The results demonstrate that the nanoparticle motion is governed by fractional Brownian motion at low dose rates, resembling diffusion in a viscoelastic medium, and continuous time random walk at high dose rates, resembling diffusion on an energy landscape with pinning sites. Both behaviors can be explained by the presence of silanol molecular species on the surface of the silicon nitride membrane and the ionic species in solution formed by radiolysis of water in presence of the electron beam.

EBIC Study of Silicon on Insulator Structures Formed by High Dose Nitrogen Implantation

1989 ◽  
Vol 136 (3) ◽  
pp. 876-878 ◽  
Author(s):  
R. Kwor ◽  
R. J. Matson ◽  
M. M. Al‐Jassim ◽  
S. Polchlopek ◽  
P. L. F. Hemment ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Implantation
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