Monte Carlo determination of mixed electrolytes next to a planar dielectric interface with different surface charge distributions

2009 ◽  
Vol 131 (24) ◽  
pp. 244715 ◽  
Author(s):  
Zhi-yong Wang ◽  
Yu-qiang Ma
Keyword(s):  
Monte Carlo ◽  
Surface Charge ◽  
Mixed Electrolytes ◽  
Dielectric Interface ◽  
Charge Distributions

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

scholarly journals Determination of electron backscattering coefficient of beryllium by a high-precision Monte Carlo simulation

2021 ◽  
Vol 26 ◽  
pp. 100862
Author(s):  
Abrar Hussain ◽  
Lihao Yang ◽  
Shifeng Mao ◽  
Bo Da ◽  
Károly Tőkési ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Precision ◽  
Backscattering Coefficient ◽  
Electron Backscattering

The electron transport that occurs within wurtzite zinc oxide and the application of stress

MRS Advances ◽  
2017 ◽  
Vol 2 (48) ◽  
pp. 2627-2632 ◽  
Author(s):  
Poppy Siddiqua ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Monte Carlo ◽  
Zinc Oxide ◽  
Electron Transport ◽  
Velocity Field ◽  
Monte Carlo Simulations ◽  
Significant Role ◽  
Energy Gap ◽  
Device Application ◽  
The Impact

ABSTRACTWe examine how stress has the potential to shape the character of the electron transport that occurs within ZnO. In order to narrow the scope of this analysis, we focus on a determination of the velocity-field characteristics associated with bulk wurtzite ZnO. Monte Carlo simulations of the electron transport are pursued for the purposes of this analysis. Rather than focusing on the impact of stress in of itself, instead we focus on the changes that occur to the energy gap through the application of stress, i.e., energy gap variations provide a proxy for the amount of stress. Our results demonstrate that stress plays a significant role in shaping the form of the velocity-field characteristics associated with ZnO. This dependence could potentially be exploited for device application purposes.

Determination of a general economic location constant by monte carlo simulation

1974 ◽  
Vol 1 (1) ◽  
pp. 119-124
Author(s):  
T.L. Honeycutt ◽  
C.E. Grad ◽  
J.D. Wilson
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo
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