Demonstration of Raman gain at 800 nm in single-mode fiber and its potential application to biological sensing and imaging

2009 ◽  
Vol 95 (25) ◽  
pp. 251101 ◽  
Author(s):  
Keisuke Goda ◽  
Ata Mahjoubfar ◽  
Bahram Jalali
Keyword(s):  
Potential Application ◽  
Single Mode ◽  
Single Mode Fiber ◽  
Raman Gain ◽  
Biological Sensing

NUMERICAL COMPARISON OF MULTI-PUMP RAMAN AMPLIFIERS BASED ON PHOTONIC CRYSTAL FIBER AND STANDARD SINGLE MODE FIBER

2007 ◽  
Vol 21 (02n03) ◽  
pp. 115-122
Author(s):  
TAO SHANG ◽  
JIANPING CHEN ◽  
XINWAN LI ◽  
JUNHE ZHOU
Keyword(s):  
Photonic Crystal ◽  
Photonic Crystal Fiber ◽  
Single Mode ◽  
High Gain ◽  
Gain Medium ◽  
Single Mode Fiber ◽  
Numerical Comparison ◽  
Raman Gain ◽  
Crystal Fiber ◽  
Raman Amplifiers

This paper presents a numerical analysis and comparison on the performance of multi-pump gain-flat Raman amplifiers based on triangular photonic crystal fiber and conventional fiber. It is demonstrated that the extra 5.93 dB Raman net gain can be achieved in the L-band when PCF acts as Raman gain medium. The noise performance of the two amplifiers are also calculated and compared. Comparison with the data of published literature was also carried out to verify our analysis. The results showed that PCF is the appropriate candidate for high gain Raman amplifiers.

TiO2-Doped Single-Mode Fiber as Active Material for Raman Lasers

2017 ◽  
Vol 753 ◽  
pp. 173-179 ◽  
Author(s):  
Georgii S. Felinskyi ◽  
Iryna V. Serdeha ◽  
Valeriy I. Grygoruk
Keyword(s):  
Spectroscopic Analysis ◽  
Active Material ◽  
Single Mode ◽  
Analytic Form ◽  
Single Mode Fiber ◽  
Fiber Types ◽  
Raman Gain ◽  
Raman Lasers ◽  
Gain Profile ◽  
Gain Threshold

The properties of TiO2-doped fiber are considered as optoelectronic material in our work. The advantages of such fiber have been studied with the aim of its application to active medium in Raman fiber lasers. The comparison of spontaneous Raman spectra and corresponding gain profiles in TiO2-doped and GeO2-doped fiber is presented. Raman gain profiles were obtained over a broad spectral range of Stokes shifted frequencies up to 1400 cm-1(42 THz). The spectral decomposition using multimode Gaussian components has been performed for both Raman gain profiles. High accuracy analytic form of Raman gain profile of TiO2-doped fiber is obtained using 12 components. The pump power of Raman gain threshold is introduced as the function of wavelength within the telecommunication windows for both fiber types. Our spectroscopic analysis allows presenting the numerical results on lasing bandwidth and Raman gain threshold inTiO2-doped single-mode fiber. It has been shown that the lasing bandwidth in TiO2-doped fiber may be almost twice wider than the lasing bandwidth in standard GeO2-doped fiber.

Performance and Reliability of a MEMS-based tunable optical filter operating in the 1565 nm-1525 nm wavelength range

2002 ◽  
Vol 722 ◽  
Author(s):  
T. S. Sriram ◽  
B. Strauss ◽  
S. Pappas ◽  
A. Baliga ◽  
A. Jean ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Line Width ◽  
Insertion Loss ◽  
Optical Filter ◽  
Single Mode ◽  
Single Mode Fiber ◽  
Reliability Testing ◽  
Silicon Nitride Membrane ◽  
Tunable Optical Filter ◽  
Extensive Performance

AbstractThis paper describes the results of extensive performance and reliability characterization of a silicon-based surface micro-machined tunable optical filter. The device comprises a high-finesse Fabry-Perot etalon with one flat and one curved dielectric mirror. The curved mirror is mounted on an electrostatically actuated silicon nitride membrane tethered to the substrate using silicon nitride posts. A voltage applied to the membrane allows the device to be tuned by adjusting the length of the cavity. The device is coupled optically to an input and an output single mode fiber inside a hermetic package. Extensive performance characterization (over operating temperature range) was performed on the packaged device. Parameters characterized included tuning characteristics, insertion loss, filter line-width and side mode suppression ratio. Reliability testing was performed by subjecting the MEMS structure to a very large number of actuations at an elevated temperature both inside the package and on a test board. The MEMS structure was found to be extremely robust, running trillions of actuations without failures. Package level reliability testing conforming to Telcordia standards indicated that key device parameters including insertion loss, filter line-width and tuning characteristics did not change measurably over the duration of the test.

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