A novel method to form conducting channels in SiOx(Si) films for field emission application

2010 ◽  
Vol 107 (1) ◽  
pp. 013702 ◽  
Author(s):  
M. Semenenko ◽  
A. Evtukh ◽  
O. Yilmazoglu ◽  
H. L. Hartnagel ◽  
D. Pavlidis
Keyword(s):  
Field Emission ◽  
Novel Method ◽  
Si Films

Resonant tunneling at electron field emission from Si tips coated with SiO2(Si) films

2018 ◽  
Vol 8 (5) ◽  
pp. 931-935 ◽  
Author(s):  
A. A. Evtukh ◽  
O. V. Pylypova ◽  
O. Martyniuk ◽  
H. Mimura
Keyword(s):  
Field Emission ◽  
Resonant Tunneling ◽  
Electron Field Emission ◽  
Electron Field ◽  
Si Films

Enhanced electron field emission from dense Si nano-dots prepared by laser crystallization of ultrathin amorphous Si films

2008 ◽  
Vol 145 (9-10) ◽  
pp. 443-446 ◽  
Author(s):  
Jun Xu ◽  
Jiang Zhou ◽  
Yao Yao ◽  
Zhanhong Cen ◽  
Fenqi Song ◽  
...  
Keyword(s):  
Field Emission ◽  
Electron Field Emission ◽  
Laser Crystallization ◽  
Electron Field ◽  
Amorphous Si ◽  
Si Films

A novel method for synthesis of well-aligned hexagonal cone-shaped ZnO nanostructures in field emission applications

2014 ◽  
Vol 125 ◽  
pp. 147-150 ◽  
Author(s):  
J. Rouhi ◽  
M. Alimanesh ◽  
S. Mahmud ◽  
R.A. Dalvand ◽  
C.H. Raymond Ooi ◽  
...  
Keyword(s):  
Field Emission ◽  
Zno Nanostructures ◽  
Novel Method

Top-Down Formation of GaN Nanocone Arrays for Application in Field Emission

2010 ◽  
Vol 44-47 ◽  
pp. 2514-2518
Author(s):  
Xin Zhong Wang ◽  
Guang Hui Yu ◽  
Shi Guo Li ◽  
Cheng Guo Wu
Keyword(s):  
Field Emission ◽  
Plasma Etching ◽  
Inductively Couple Plasma ◽  
X Ray Diffraction ◽  
Top Down ◽  
X Ray ◽  
Field Emission Properties ◽  
Turn On ◽  
Novel Method ◽  
Inductively Couple Plasma Etching

We present a novel method to fabricate uniform GaN nanocone arrays (GNA) using Nickel-nanoisland masks. The nanoscale conelike arrays with high density can be formed over the entire 2-inch wafer by inductively couple plasma etching. The results of X-ray diffraction exhibit significant decrease on the (102) reflection in GaN sample with the GNA. Field-emission measurements show that the GNA with sharp tips have a turn-on field of ~ 5.5 V/μm. It is believed that the high aspect ratio resulting from the conelike morphology is responsible for the enhancement of the field-emission properties of GNA.

Enhanced electrical properties and field emission characteristics of AZO/ZnO-nanowire core–shell structures

2016 ◽  
Vol 18 (22) ◽  
pp. 15251-15259 ◽  
Author(s):  
Jheng-Ming Huang ◽  
Shang-You Tsai ◽  
Ching-Shun Ku ◽  
Chih-Ming Lin ◽  
San-Yuan Chen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Field Emission ◽  
Atomic Layer ◽  
Shell Structures ◽  
Core Shell ◽  
Emission Characteristics ◽  
Zno Nanowire ◽  
Layer Deposition ◽  
Novel Method

The electrical properties and field-emission characteristics of AZO/ZnO nanowires fabricated using a novel method of atomic layer deposition were systematically investigated.

The Preparation of Carbon Nanotube/Sodium Silicate Composite Film

2013 ◽  
Vol 333-335 ◽  
pp. 1828-1831
Author(s):  
Ran Chen ◽  
Gui Fu Ding ◽  
Yan Wang ◽  
Wen Lu
Keyword(s):  
Mechanical Property ◽  
Carbon Nanotube ◽  
Surface Morphology ◽  
Composite Film ◽  
Field Emission ◽  
Sodium Silicate ◽  
Field Emission Cathode ◽  
Novel Method ◽  
Emission Cathode ◽  
Mechanical Ball Milling

A novel method of preparing CNT/sodium silicate composite film is put forward. By grinding and mechanical ball milling to get a homogeneous mixture, solidifying to form composite film and then exposing the CNTs on the surface of the film with their roots still in the sodium silicate by selective etching, the composite film was fabricated. Thanks to the wettability and adhesion between CNTs and sodium silicate the mechanical property of the film is improved. And the surface morphology of it is well-distributed and controllable. Such composite film is suitable to be applied in electrochemical sensor and field emission cathode.

Novel Method of Growing Ultrananocrystalline Diamond Tips and Their Field Emission Property Study

2008 ◽  
Vol 8 (8) ◽  
pp. 4198-4201 ◽  
Author(s):  
P. T. Joseph ◽  
Li-Ju Chen ◽  
Nyan-Hwa Tai ◽  
Umesh Palnitkar ◽  
Hsiu-Fung Cheng ◽  
...  
Keyword(s):  
Field Emission ◽  
Field Enhancement ◽  
Emission Sources ◽  
Insulating Materials ◽  
Field Emission Properties ◽  
Turn On ◽  
Field Emitters ◽  
Ultrananocrystalline Diamond ◽  
Novel Method

Different forms of diamond have been shown to have qualities as field emission sources. As a consequence, much effort has been focused on both the synthesis of diamond nanostructures to increase the field enhancement factor and understanding the emission mechanism in these nominally insulating materials. In our recent study, we have grown ultrananocrystalline diamond (UNCD) coated nanocrystalline diamond (NCD) tips on NCD films for field emitters. The films were characterized using field emission scanning electron microscopy and Raman spectroscopy to identify the quality of the films. The fabricated different sizes of pyramid tips and their field emission properties are reported. It has been observed that with increase in tip size, the turn on voltage also increases.

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