scholarly journals Electron transport through asymmetric ferroelectric tunnel junctions: Current-voltage characteristics

2009 ◽  
Vol 106 (12) ◽  
pp. 124101 ◽  
Author(s):  
Natalya A. Zimbovskaya
Keyword(s):  
Electron Transport ◽  
Tunnel Junctions ◽  
Current Voltage ◽  
Current Voltage Characteristics

Irregular Electron Transport Through a-Si:H Based Potential Barriers

1993 ◽  
Vol 297 ◽  
Author(s):  
Norbert Bernhard ◽  
B. Frank ◽  
B. Movaghar ◽  
G.H. Bauer
Keyword(s):  
Electron Transport ◽  
Transport Mechanism ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Potential Barriers ◽  
Resonant Tunnelling ◽  
Current Voltage ◽  
Different Temperatures ◽  
Current Voltage Characteristics ◽  
Stable Formation

Irregularities in the current-voltage-characteristics of a-Si:H based potential barriers have been investigated experimentally, and are discussed theoretically with respect to different transport mechanisms. The investigated samples were different series of double and single barrier a-Si:H - a-Si1-xCx:H - heterostructures, as well as homogeneous samples without heterostructure barrier. Current-voltage-(I-V)-characteristics showing a wide variety of features, from complete smoothness of the curves, to bumps and even accidental step-like switching behaviour, as well as different forms of noise, were recorded at different temperatures. Resonant tunnelling as an explaining transport mechanism for the anomalies was excluded because of inconsistency between experiment and calculations partially including special amorphous features. Instead it is argued that all observed irregularities, i. e. bumps in I-V-curves, switching-like behaviour, and appearance of noise, are related to current transport via trap-assisted tunnelling through locally strongly confined transport paths, leading to the meta-stable formation, change and break-down of conductory filaments.

scholarly journals Electron transport in AlGaN/GaN HEMT-like nanowires: Effect of depletion and UV excitation

2021 ◽  
Vol 24 (04) ◽  
pp. 407-412
Author(s):  
A.V. Naumov ◽  
◽  
V.V. Kaliuzhnyi ◽  
S.A. Vitusevich ◽  
H. Hardtdegen ◽  
...  
Keyword(s):  
Electron Transport ◽  
Space Charge ◽  
Ultraviolet Excitation ◽  
Gan Hemt ◽  
Current Voltage ◽  
Significant Difference ◽  
Current Voltage Characteristics ◽  
Uv Excitation ◽  
Biosensor Applications ◽  
Space Charge Limited

In this work, we have investigated the features of electron transport in AlGaN/GaN transistor-like heterostructures with nanowires of different width. These nanostructures are studied extensively because of their great electronic and sensing advantages for electronic biosensor applications. We study the depletion effects and impact of ultraviolet excitation on the electron transport in sets of nanowires of different width from 1110 down to 185 nm. We have found significant difference in electrical characteristic’s behavior between wide (1110…480 nm) and narrow (280…185 nm) nanowires and have observed regions related to space-charge-limited transport for the narrowest nanowires. Also, we obtained evident dependence of nanowire’s current-voltage characteristics on the wavelength and energy of UV excitation. External UV excitation allows us to control the depletion widths in nanowires and effectively tune space-charge-limited transport.

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