Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy

2009 ◽  
Vol 106 (11) ◽  
pp. 113533 ◽  
Author(s):  
M. A. Moram ◽  
Y. Zhang ◽  
T. B. Joyce ◽  
D. Holec ◽  
P. R. Chalker ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam

scholarly journals Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105020 ◽  
Author(s):  
Z. P. Zhang ◽  
Y. X. Song ◽  
Y. Y. Li ◽  
X. Y. Wu ◽  
Z. Y. S. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Molecular Beam

Vertical self-organization of Ge1−xMnx nanocolumn multilayers grown on Ge(001) substrates

2016 ◽  
Vol 30 (20) ◽  
pp. 1650269 ◽  
Author(s):  
Thi Giang Le ◽  
Minh Tuan Dau
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Elastic Constant ◽  
Structural Properties ◽  
Molecular Beam ◽  
Self Organization ◽  
Transmission Electron ◽  
2D Model

High-resolution transmission electron microscopy (HR-TEM) has been used to investigate the structural properties of GeMn/Ge nanocolumns multilayer samples grown on Ge(001) substrates by means of molecular beam epitaxy (MBE) system. Four bilayers with the spacer thickness in the range between 6 nm and 15 nm and 10 periods of bilayers of Ge[Formula: see text]Mn[Formula: see text]/Ge nanocolumn are presented. A simplified 2D model based on the theory of elastic constant interactions has been used to provide reasonable explanations to the vertical self-organization of GeMn nanocolumns in multilayers.

Molecular beam epitaxy and structural properties of ZnCrS

2006 ◽  
Vol 3 (4) ◽  
pp. 776-779 ◽  
Author(s):  
Kunio Ichino ◽  
Yasuharu Morimoto ◽  
Hiroshi Kobayashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam

Effect of SiO2 Thickness on GaAs Nanowires on Si (111) Substrates Grown by Molecular Beam Epitaxy

2015 ◽  
Vol 1131 ◽  
pp. 16-19
Author(s):  
Patchareewan Prongjit ◽  
Samatcha Vorathamrong ◽  
Somsak Panyakeow ◽  
Chiraporn Tongyam ◽  
Piyasan Prasertthdam ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Molecular Beam Epitaxy ◽  
Scanning Electron Microscope ◽  
Structural Properties ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Si Substrate ◽  
Growth Technique ◽  
Gaas Nanowires ◽  
Scanning Electron

The GaAs nanowires are grown on Si (111) substrates by Ga-assisted molecular beam epitaxy growth technique. The effect of SiO2 thickness on the structural properties of GaAs nanowires is investigated by Scanning Electron Microscope (SEM). The nucleation of GaAs nanowires related to the presence of a SiO2 layer previously coated on Si substrate. The results show that the density, length, and diameter of GaAs nanowires strongly depend on the oxidation time (or SiO2 thickness).

Magnetic, transport and structural properties of Co/Ir multilayers grown by molecular beam epitaxy

2003 ◽  
Vol 199 (2) ◽  
pp. 161-168 ◽  
Author(s):  
S. Colis ◽  
A. Dinia ◽  
C. Ulhaq-Bouillet ◽  
P. Panissod ◽  
C. Mény ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam ◽  
Magnetic Transport

Structural properties of Bi2Te3 topological insulator thin films grown by molecular beam epitaxy on (111) BaF2 substrates

2016 ◽  
Vol 119 (16) ◽  
pp. 165303 ◽  
Author(s):  
Celso I. Fornari ◽  
Paulo H. O. Rappl ◽  
Sérgio L. Morelhão ◽  
Eduardo Abramof
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Topological Insulator ◽  
Molecular Beam

Structural properties of SrO thin films grown by molecular beam epitaxy on LaAlO3 substrates

2006 ◽  
Vol 89 (26) ◽  
pp. 262903 ◽  
Author(s):  
O. Maksimov ◽  
V. D. Heydemann ◽  
P. Fisher ◽  
M. Skowronski ◽  
P. A. Salvador
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam
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