Undoped vacuum annealed In2O3 thin films as a transparent conducting oxide

2009 ◽  
Vol 95 (19) ◽  
pp. 192105 ◽  
Author(s):  
A. Dixit ◽  
C. Sudakar ◽  
R. Naik ◽  
V. M. Naik ◽  
G. Lawes
2019 ◽  

Transparent conducting oxide (TCO) thin films are materials of significance for their applications in optoelectronics and sun powered cells. Fluorine-doped tin oxide (FTO) is an elective material in the advancement of TCO films. This paper reports the impact of fluorine doping on structural, optical and electrical properties of tin oxide thin films for solar cells application. The sol-gel was prepared from anhydrous stannous chloride, SnCl2 as an originator, 2-methoxyethanol as a solvent, di-ethanolamine as a preservative and ammonium fluoride as the dopant source. FTO precursor solution was formulated to obtain 0, 5, 10, 15 and 20 % doping concentration and deposited on glass substrates by means of spin coater at the rate of 2000 rpm for 40 seconds. After pre-heated at 200 oC, the samples were annealed at 600 oC for 2 h. The structural, optical and electrical characteristics of prepared films were characterized using X-ray diffraction (XRD) analysis, UV-visible spectroscopy and electrical measurement. X-ray diffraction (XRD) investigation of the films demonstrated that the films were polycrystalline in nature with tetragonal-cassiterite structure with most extraordinary pinnacle having a grain size of 17.01 nm. Doping with fluorine decreases the crystallite size. There was increment in the absorbance of the film with increasing wavelength and the transmittance was basically reduced with increasing fluorine doping in the visible region. The energy band gaps were in the range of 4.106-4.121 eV. The sheet resistance were observed to decrease as the doping percentage of fluorine increased with exception at higher doping of 15 and 20 %. In view of these outcomes, FTO thin films prepared could have useful application in transparent conducting oxide electrode in solar cell.


2009 ◽  
Vol 17 (4) ◽  
pp. 265-272 ◽  
Author(s):  
J. W. Bowers ◽  
H. M. Upadhyaya ◽  
S. Calnan ◽  
R. Hashimoto ◽  
T. Nakada ◽  
...  

2016 ◽  
Author(s):  
Felcy Jyothi Serrao ◽  
K. M. Sandeep ◽  
Shreesha Bhat ◽  
S. M. Dharmaprakash

2020 ◽  
Vol 15 (1) ◽  
pp. 101-107
Author(s):  
M. Karunakaran ◽  
L. Bruno Chandrasekar ◽  
K. Kasirajan ◽  
R. Chandramohan

This paper reported the preparation and characterization of transparent conducting oxide thin films. Undoped and doped ZnO thin films were prepared by SILAR method. The micro-structural and optical properties were investigated. X-ray diffraction patterns revealed that the prepared thin films are polycrystalline in nature and has a hexagonal structure. The micro-structural properties of prepared thin films were calculated and crystallite size tends to changes due to dopant. The texture coefficients have been evaluated and found to be greater than unity revealing high texturing of the film. Undoped and Mn-doped ZnO prefer the orientation of (002) but Ni-doped ZnO and Mn and Ni co-doped ZnO prefers (100) orientation. The transmittance spectra of pure and transition metal-doped films were plotted against UV-Vis-NIR region and found that the transmittance changes with dopant and nature of doping. The optical band gap values were found to be in the range of 3.00–3.39 eV. The optical constants such as extinction coefficient, refractive index, dielectric constant and optical conductivity were examined.


2002 ◽  
Vol 16 (01n02) ◽  
pp. 308-313 ◽  
Author(s):  
YUE WANG ◽  
HAO GONG ◽  
LING LIU

P-type transparent conducting oxide thin films have attracted much attention due to their potential applications in novel transparent p-n junction devices. In this work, the transparent conducting Cu-Al-O thin films were prepared by the plasma enhanced chemical vapor deposition using metal organic precursors of Cu(acac) 2 and Al(acac) 3 (acac=acetylacetonate) while the substrate temperature was varied from 700 to 800°C. The x-ray diffraction and SEM results are analyzed to investigate the structure of the as-deposited and annealed films. The films contain metal copper and small grains of CuAlO 2. After annealing, metal copper turned into CuO . Hall effect measurements reveal that these films are p-type semiconductors and the film conductivity increased with the growth temperature.


2008 ◽  
Vol 113 (3) ◽  
pp. 1083-1087 ◽  
Author(s):  
Jun Hong Noh ◽  
Sangwook Lee ◽  
Jin Young Kim ◽  
Jung-Kun Lee ◽  
Hyun Soo Han ◽  
...  

2007 ◽  
Vol 22 (3) ◽  
pp. 681-687 ◽  
Author(s):  
Andrew J. Leenheer ◽  
Alexander Miedaner ◽  
Calvin J. Curtis ◽  
Maikel F.A.M. van Hest ◽  
David S. Ginley

Nanoporous titania (TiO2) or titania nanotubes could provide a continuous nanostructured electron-conducting anode for organic photovoltaics. In this work, nanoporous titania was formed by anodizing thin films of titanium on both glass and transparent conducting oxide (TCO) substrates. Titanium thin films (500–700 nm) were deposited by radio frequency (RF) magnetron sputtering. Films were anodized in acidic electrolytes containing small amounts of hydrofluoric acid (HF) at constant voltages ranging from 7 to 15 V. Scanning electron microscope (SEM) analysis revealed a nanoporous structure. Nanoporous titania structures were grown on glass in an electrolyte containing sulfuric acid, trisodium citrate, and potassium fluoride, with pore diameters around 50 nm. Analyzing the films at different anodization times, the stages of nanopore formation were elucidated. Additionally, nanoporous titania was formed on a TCO substrate by anodizing in an electrolyte containing acetic acid and hydrofluoric acid. While not completely transparent, the nanoporous titania is promising for use in organic photovoltaics.


2003 ◽  
Vol 443 (1-2) ◽  
pp. 60-65 ◽  
Author(s):  
Kaiyang Zeng ◽  
Furong Zhu ◽  
Jianqiao Hu ◽  
Lu Shen ◽  
Keran Zhang ◽  
...  

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