Interfacial electronic structure of copper phthalocyanine on a gold surface studied by synchrotron radiation photoemission

2009 ◽  
Vol 106 (11) ◽  
pp. 113716 ◽  
Keyword(s):  
Electronic Structure ◽  
Synchrotron Radiation ◽  
Copper Phthalocyanine ◽  
Gold Surface ◽  
Interfacial Electronic Structure ◽  
Synchrotron Radiation Photoemission

Interfacial electronic structure of copper phthalocyanine and copper hexadecafluorophthalocyanine studied by photoemission

2006 ◽  
Vol 88 (17) ◽  
pp. 173513 ◽  
Author(s):  
K. M. Lau ◽  
J. X. Tang ◽  
H. Y. Sun ◽  
C. S. Lee ◽  
S. T. Lee ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Copper Phthalocyanine ◽  
Interfacial Electronic Structure

THE Fe ULTRATHIN FILM ON ZnO(000-1) SURFACE: GROWTH, STRUCTURE, AND INTERACTION

2008 ◽  
Vol 15 (03) ◽  
pp. 295-300 ◽  
Author(s):  
GUO-DONG WANG ◽  
FA-QIANG XU ◽  
WANG ZHANG ◽  
WEN-HUA ZHANG ◽  
ZONG-MU LI
Keyword(s):  
Electronic Structure ◽  
Synchrotron Radiation ◽  
Work Function ◽  
Metallic Iron ◽  
Turning Point ◽  
Growth Structure ◽  
Dipole Layer ◽  
Fermi Edge ◽  
Low Coverage ◽  
Synchrotron Radiation Photoemission

We report the electronic structure of the interface of the ultrafilm Fe film with the O -terminated ZnO (000-1) polar surface studied by synchrotron radiation photoemission. It was found that Fe grows in a Stranski–Krastanov mode. The turning point of the growth mode was at the Fe coverage of ~2 Å. At low coverage, about 1 ML (monolayer) of iron (ca. 1.5 Å) was oxidized by the terminative oxygen atoms on the ZnO (000-1) surface. Analysis of the valence band and the Fe 3 p photoemission spectra indicates that below 2 Å coverage, only Fe 2+ species could be detected at the Fe / ZnO interface, after that the formation of a metallic iron overlayer was observed. A sharp Fermi edge appeared at 5.1 Å coverage, indicating the formation of the bulk metallic Fe film. Furthermore, work function of the sample decreased to a minimum of 4.5 eV at 0.2 Å Fe , and then to 4.9 eV with the formation of a dipole layer at the interface.

Surface electronic structure of Si1−x Ge x (001)-2 × 1: a synchrotron radiation photoemission study

2020 ◽  
Vol 13 (9) ◽  
pp. 095503
Author(s):  
Yi-Ting Cheng ◽  
Hsien-Wen Wan ◽  
Chao-Kai Cheng ◽  
Chiu-Ping Cheng ◽  
Jueinai Kwo ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Synchrotron Radiation ◽  
Surface Electronic Structure ◽  
Photoemission Study ◽  
Synchrotron Radiation Photoemission
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