Transmission electron microscopy of Au‐based Ohmic contacts ton‐AlxGa1−xAs

1979 ◽  
Vol 50 (11) ◽  
pp. 7030-7033 ◽  
Author(s):  
C. C. Chang ◽  
T. T. Sheng ◽  
R. J. McCoy ◽  
S. Nakahara ◽  
V. G. Keramidas ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ohmic Contacts ◽  
Transmission Electron

Transmission electron microscopy assessment of the Si enhancement of Ti∕Al∕Ni∕Au Ohmic contacts to undoped AlGaN∕GaN heterostructures

2006 ◽  
Vol 100 (3) ◽  
pp. 034904 ◽  
Author(s):  
Vincent Desmaris ◽  
Jin-Yu Shiu ◽  
Chung-Yu Lu ◽  
Niklas Rorsman ◽  
Herbert Zirath ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ohmic Contacts ◽  
Transmission Electron

Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy

2001 ◽  
Vol 89 (6) ◽  
pp. 3143-3150 ◽  
Author(s):  
A. N. Bright ◽  
P. J. Thomas ◽  
M. Weyland ◽  
D. M. Tricker ◽  
C. J. Humphreys ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Contact Resistance ◽  
Ohmic Contacts ◽  
Transmission Electron

Correlation Between the Microstructures and the Electrical Properties of Ni/Au/Te/Au Contacts on n-GaAs

1994 ◽  
Vol 337 ◽  
Author(s):  
X. W. Lin ◽  
J. Watté ◽  
K. Wuyts ◽  
W. Swider ◽  
R.E. Silverans ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electrical Properties ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Structural Evolution ◽  
Reaction Products ◽  
Transmission Electron ◽  
Major Reaction ◽  
Ohmic Contact Formation

ABSTRACTThe structural evolution of Ni/Au/Te/Au contacts on n-GaAs (001) was examined, in correlation with their electrical properties as a function of rapid thermal annealing in the temperature range 350 - 600°C. It was found that heating at temperatures ≥ 550°C results in the formation of ohmic contacts, while contacts annealed at lower temperatures remain nonohmic. Transmission electron microscopy revealed that heating ≥ 450°C leads to extensive reactions between Ni/Au/Te/Au and GaAs and deep spike formation into the GaAs. The major reaction products were identified as NiAs and β-AuGa. Ga2Te3 grains, growing epitaxially on GaAs, were detected only in 550°C annealed samples. Heating to 600°C caused considerable Ga2Te3 loss. Implications of these results concerning the ohmic contact formation mechanism are discussed.

Non-Alloyed Ohmic Contacts to n-GaAs Using Epitaxial Ge Layers

1985 ◽  
Vol 54 ◽  
Author(s):  
T. Sawada ◽  
W. X. Chen ◽  
E. D. Marshall ◽  
K. L. Kavanagh ◽  
T. F. Kuech ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Solid State Reactions ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Shallow Junctions

ABSTRACTAlloyed ohmic contacts (i.e. Au-Ge-Ni) to n-GaAs lead to non-planar interfaces which are unsuitable for devices with shallow junctions and small dimensions. In this study, the fabrication of non-alloyed ohmic contacts (via solid state reactions) is investigated. A layered structure involving the solid phase epitaxy of Ge using a transport medium (PdGe) is shown to produce low (1 — 5 × 10∼6Ω cm2) and reproducible values of contact resistivity. The resultant interface is shown to be abrupt by cross-sectional transmission electron microscopy.

Stable Solid-Phase Ohmic Contacts to n-GaAs with Diffusion Barriers

1988 ◽  
Vol 126 ◽  
Author(s):  
E. Kolawa ◽  
C. W. Nieh ◽  
W. Flick ◽  
J. Molarius ◽  
M-A. Nicolet
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Diffusion Barriers ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Resistivity Measurements ◽  
Gaas Substrates ◽  
Transmission Electron

ABSTRACTContacts to GaAs substrates with n-type epilayers formed by GaAs/Ni/Ge/WN/Au, GaAs/Ni/Ge/Ni/WN/Au and GaAs/Ge/ Ni/WN/Au systems were investigated. Ohmic contacts in these systems were formed by a solid-phase reaction between Ni/Ge and GaAs. Interfacial reaction and electrical properties of these contacts are characterized by backscattering spectrometry, transmission electron microscopy and contact resistivity measurements. Resistivities in the 10−δ Ω cm range are achieved.

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