A method for evaluating the ground state excitonic band gaps of strained InxGa1−xN/GaN quantum wells

2009 ◽  
Vol 106 (10) ◽  
pp. 104509 ◽  
Author(s):  
T. K. Sharma ◽  
E. Towe
Keyword(s):  
Quantum Wells ◽  
Ground State ◽  
Band Gaps ◽  
Excitonic Band

scholarly journals Effect of temperature on isotopic mass dependence of excitonic band gaps in semiconductors: ZnO

2007 ◽  
Vol 75 (20) ◽  
Author(s):  
H. Alawadhi ◽  
S. Tsoi ◽  
X. Lu ◽  
A. K. Ramdas ◽  
M. Grimsditch ◽  
...  
Keyword(s):  
Band Gaps ◽  
Effect Of Temperature ◽  
Mass Dependence ◽  
Excitonic Band

Effective mass and ground state of AlAs quantum wells studied by magnetoresistance measurements

1992 ◽  
Vol 71 (1) ◽  
pp. 296-299 ◽  
Author(s):  
Koichi Maezawa ◽  
Takashi Mizutani ◽  
Syoji Yamada
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Ground State

Exchange splitting of the heavy hole exciton ground state in GaAs-GaAlAs quantum wells

1990 ◽  
Vol 229 (1-3) ◽  
pp. 151-154 ◽  
Author(s):  
M. Potemski ◽  
J.C. Maan ◽  
A. Fasolino ◽  
K. Ploog ◽  
G. Weimann
Keyword(s):  
Quantum Wells ◽  
Ground State ◽  
Heavy Hole ◽  
Exchange Splitting ◽  
Exciton Ground State

The influences of parabolic potential and magnetism on strongly coupled polaron characteristics within asymmetric Gaussian quantum wells

2021 ◽  
Author(s):  
Saren Gaowa ◽  
Yan-Bo Geng ◽  
Zhao-Hua Ding ◽  
Jing-Lin Xiao
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Barrier Height ◽  
Ground State Energy ◽  
Ground State ◽  
State Energy ◽  
Cyclotron Frequency ◽  
Strongly Coupled ◽  
Parabolic Potential ◽  
Do So

In this research, the effects of magnetism and parabolic potential on strongly coupled polaron characteristics within asymmetric Gaussian quantum wells (AGQWs) were investigated. To do so, the following six parameters were studied, temperature, AGQW barrier height, Gaussian confinement potential (GCP) width, confinement strengths along the directions of [Formula: see text] and [Formula: see text], as well as magnetic field cyclotron frequency. The relationships among frequency oscillation, AGQW parameters and polaron ground state energy in RbCl crystal were studied based on linear combination operator and Lee–Low–Pines unitary transformation. It was concluded that ground state energy absolute value was decreased by increasing GCP width and temperature, and increased with the increase of confinement strength along [Formula: see text] and [Formula: see text] directions, cyclotron frequency of magnetic field and barrier height of AGQW. It was also found that vibrational frequency was increased by enhancing confinement strengths along the directions of [Formula: see text] and [Formula: see text], magnetic field cyclotron frequencies, barrier height AGQW and temperature and decreased with the increase of GCP width.

Stacking Faults and 3C Quantum Wells in Hexagonal SiC Polytypes

2006 ◽  
Vol 527-529 ◽  
pp. 351-354 ◽  
Author(s):  
M.S. Miao ◽  
Walter R.L. Lambrecht
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
First Principles ◽  
Driving Force ◽  
Stacking Faults ◽  
Band Gaps ◽  
Partial Dislocations ◽  
Band Structure Calculations ◽  
Thermodynamic Driving Force ◽  
Structure Calculations

The electronic driving force for growth of stacking faults (SF) in n-type 4H SiC under annealing and in operating devices is discussed. This involves two separate aspects: an overall thermodynamic driving force due to the capture of electrons in interface states and the barriers that need to be overcome to create dislocation kinks which advance the motion of partial dislocations and hence expansion of SF. The second problem studied in this paper is whether 3C SiC quantum wells in 4H SiC can have band gaps lower than 3C SiC. First-principles band structure calculations show that this is not the case due to the intrinsic screening of the spontaneous polarization fields.

BUILT-IN ELECTRIC FIELD EFFECT ON DONOR IMPURITIES IN STRAINED WURTZITE GaN/AlGaN ASYMMETRIC DOUBLE QUANTUM WELLS

2012 ◽  
Vol 26 (26) ◽  
pp. 1250172 ◽  
Author(s):  
JUN ZHU ◽  
SHI LIANG BAN ◽  
SI HUA HA
Keyword(s):  
Variational Method ◽  
Electric Field ◽  
Quantum Wells ◽  
Ground State ◽  
Field Effect ◽  
Binding Energies ◽  
Double Quantum ◽  
Electric Field Effect ◽  
Material Parameters ◽  
Asymmetric Double Quantum Wells

The ground state binding energies of donor impurities in strained [0001]-oriented wurtzite GaN / Al x Ga 1-x N asymmetric double quantum wells are investigated using a variational method combined with numerical computation. The built-in electric field due to the spontaneous and strain-induced piezoelectric polarization and the strain modification on material parameters are taken into account. The variations of binding energies versus the width of central barrier, the ratio of two well widths, and the impurity position are presented, respectively. It is found that the built-in electric field causes a mutation of binding energies with increasing the width of central barrier to some value. The results for symmetrical double quantum wells and without the built-in electric field are also discussed for comparison.

Surface relaxation frequency of ground-state exciton in quantum wells

2002 ◽  
Vol 33 (4) ◽  
pp. 375-378
Author(s):  
N. Atenco-Analco ◽  
N.M. Makarov ◽  
F. Pérez-Rodrı́guez
Keyword(s):  
Quantum Wells ◽  
Ground State ◽  
Relaxation Frequency ◽  
Surface Relaxation
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