n-type β-FeSi2/intrinsic-Si/p-type Si heterojunction photodiodes for near-infrared light detection at room temperature

2009 ◽  
Vol 95 (16) ◽  
pp. 162102 ◽  
Author(s):  
Mahmoud Shaban ◽  
Shota Izumi ◽  
Keita Nomoto ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Room Temperature ◽  
Near Infrared ◽  
Infrared Light ◽  
Light Detection ◽  
Near Infrared Light ◽  
P Type

Near-Infrared Light Detection of n-Type  -FeSi2/Intrinsic Si/p-Type Si Heterojunction Photodiodes at Low Temperatures

2013 ◽  
Vol 50 (6) ◽  
pp. 129-135
Author(s):  
R. Iwasaki ◽  
K. Yamashita ◽  
N. Promros ◽  
S. Izumi ◽  
S. Funasaki ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Near Infrared ◽  
Infrared Light ◽  
Light Detection ◽  
Near Infrared Light ◽  
P Type

Self-Powered Flexible Artificial Synapse for Near-Infrared Light Detection

2021 ◽  
Author(s):  
Hao Chen ◽  
Lei Lv ◽  
Yanan Wei ◽  
Tianhua Liu ◽  
Song Wang ◽  
...  
Keyword(s):  
Near Infrared ◽  
Infrared Light ◽  
Light Detection ◽  
Near Infrared Light ◽  
Artificial Synapse ◽  
Self Powered

Light Detection and Carrier Transportation Mechanism in p-Type Si/n-Type Nanocrystalline FeSi2 Heterojunctions Produced via Radio-Frequency Magnetron Sputtering

2020 ◽  
Vol 20 (8) ◽  
pp. 5082-5088
Author(s):  
Pattarapol Sittisart ◽  
Nathaporn Promros ◽  
Rawiwan Chaleawpong ◽  
Peerasil Charoenyuenyao ◽  
Nattakorn Borwornpornmetee ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Leakage Current ◽  
Room Temperature ◽  
Near Infrared ◽  
Radio Frequency Magnetron Sputtering ◽  
Light Detection ◽  
Zero Bias ◽  
Nir Light ◽  
P Type ◽  
Carrier Transportation

In the current research, p-type Si/n-type nanocrystalline FeSi2 heterojunctions were fabricated at room temperature with an argon pressure of 2.66×10−1 Pa by means of the utilization of a radiofrequency magnetron sputtering technique. These heterojunctions were studied for the carrier transportation mechanism and near-infrared (NIR) light detection at various temperatures ranging from 300 K down to 150 K. At 300 K, the fabricated heterojunctions displayed a typical rectifying action together with substantial leakage current. At 150 K, the leakage current was clearly reduced by greater than four orders of magnitude. The value of the ideality factor (n) at 300 K was computed to be 1.87 and this was nearly constant under temperatures ranging from 300 down to 260 K. This implies that a recombination process was predominant. At temperatures lower than 250 K, the value of n was found to be more than 2. These results demonstrated that the carrier transportation mechanism was governed by a tunnelling process. A weak response for the irradiation of NIR light was observed at 300 K. At 150 K, the ratio of the photocurrent to the dark current evidently increased by more than two orders of magnitude. The detectivity at 150 K was 4.84×1010 cm Hz1/2 W−1 at zero bias voltage, which was clearly improved as compared to that at 300 K.

Interface coassembly of mesoporous MoS2 based-frameworks for enhanced near-infrared light driven photocatalysis

2016 ◽  
Vol 52 (38) ◽  
pp. 6431-6434 ◽  
Author(s):  
Lihua Zhi ◽  
Haoli Zhang ◽  
Zhengyin Yang ◽  
Weisheng Liu ◽  
Baodui Wang
Keyword(s):  
Photocatalytic Activity ◽  
Room Temperature ◽  
Near Infrared ◽  
Three Dimensional ◽  
Infrared Light ◽  
Direct Arylation ◽  
Near Infrared Light ◽  
Nir Light ◽  
Hybrid Framework ◽  
First Time

The three-dimensional porous Fe3O4@Cu2−xS–MoS2 framework is reported for the first time. Such a hybrid framework exhibits excellent NIR-light photocatalytic activity and stable cycling for the direct arylation of heteroaromatics at room temperature.

Epitaxially-grown germanium/silicon avalanche photodiodes for near infrared light detection

2009 ◽  
Author(s):  
Yimin Kang ◽  
Han-Din Liu ◽  
Mike Morse ◽  
Mario J. Paniccia ◽  
Moshe Zadka ◽  
...  
Keyword(s):  
Near Infrared ◽  
Avalanche Photodiodes ◽  
Infrared Light ◽  
Light Detection ◽  
Near Infrared Light ◽  
Germanium Silicon
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