Effect of injection current density on electroluminescence in silicon quantum dot light-emitting diodes

2009 ◽  
Vol 95 (15) ◽  
pp. 153103 ◽  
Author(s):  
Baek Hyun Kim ◽  
Robert F. Davis ◽  
Chang-Hee Cho ◽  
Seong-Ju Park
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Light Emitting Diodes ◽  
Injection Current ◽  
Light Emitting ◽  
Silicon Quantum Dot ◽  
Injection Current Density

Improved Brightness and Color Tunability of Solution-Processed Silicon Quantum Dot Light-Emitting Diodes

2020 ◽  
Vol 124 (42) ◽  
pp. 23333-23342
Author(s):  
Hiroyuki Yamada ◽  
Noriyuki Saitoh ◽  
Batu Ghosh ◽  
Yoshitake Masuda ◽  
Noriko Yoshizawa ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Solution Processed ◽  
Light Emitting ◽  
Silicon Quantum Dot ◽  
Color Tunability

Degradation of quantum dot light emitting diodes, the case under a low driving level

2020 ◽  
Vol 8 (6) ◽  
pp. 2014-2018 ◽  
Author(s):  
Xulan Xue ◽  
Jiayi Dong ◽  
Shuangpeng Wang ◽  
Hanzhuang Zhang ◽  
Han Zhang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Electron Accumulation

The case of degradation in red QLEDs driven by a low current density of 7.5 mA cm−2 is systematically investigated. It is demonstrated that the exceeding electron accumulation and leakage are responsible for the degradation of red QLED devices.

scholarly journals Effects of Injection Current on the Modulation Bandwidths of Quantum-Dot Light-Emitting Diodes

2019 ◽  
Vol 66 (11) ◽  
pp. 4805-4810 ◽  
Author(s):  
Hua Xiao ◽  
Xiangtian Xiao ◽  
Dan Wu ◽  
Rui Wang ◽  
Kai Wang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Injection Current ◽  
Light Emitting

scholarly journals Silicon-Quantum-Dot Light-Emitting Diodes With Interlayer-Enhanced Hole Transport

2017 ◽  
Vol 9 (2) ◽  
pp. 1-10 ◽  
Author(s):  
Wei Gu ◽  
Xiangkai Liu ◽  
Xiaodong Pi ◽  
Xingliang Dai ◽  
Shuangyi Zhao ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Light Emitting ◽  
Silicon Quantum Dot

Visible electroluminescence from hybrid colloidal silicon quantum dot-organic light-emitting diodes

2011 ◽  
Vol 98 (21) ◽  
pp. 213102 ◽  
Author(s):  
Chang-Ching Tu ◽  
Liang Tang ◽  
Jiangdong Huang ◽  
Apostolos Voutsas ◽  
Lih Y. Lin
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Silicon Quantum Dot

Green Emission of Silicon Quantum Dot Light-emitting Diodes caused by Enhanced Carrier Injection

2011 ◽  
Vol 59 (3) ◽  
pp. 2183-2186 ◽  
Author(s):  
Baek Hyun Kim ◽  
Jae Wan Kwon ◽  
Seong-Ju Park ◽  
Robert F. Davis ◽  
Chul Huh ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Green Emission ◽  
Carrier Injection ◽  
Light Emitting ◽  
Silicon Quantum Dot

scholarly journals Study on the Effect of Size on InGaN Red Micro-LEDs

2021 ◽  
Author(s):  
Ray-Hua Horng ◽  
Chun-Xin Ye ◽  
Po-Wei Chen ◽  
Daisuke Iida ◽  
Kazuhiro Ohkawa ◽  
...  
Keyword(s):  
Current Density ◽  
High Current Density ◽  
Light Emitting Diode ◽  
Blue Shift ◽  
Injection Current ◽  
Emission Wavelength ◽  
Direct Writing ◽  
Light Emitting ◽  
Full Color ◽  
Injection Current Density

Abstract In this research, five sizes (100⊆100, 75⊆75, 50⊆50, 25⊆25, 10⊆10 µm2) of InGaN red micro-light emitting diode (LED) dies are produced using laser-based direct writing and maskless technology. It is observed that with increasing injection current, the smaller the size of the micro-LED, the more obvious the blue shift of the emission wavelength. When the injection current is increased from 0.1 to 1 mA, the emission wavelength of the 10×10 µm2 micro-LED is shifted from 617.15 to 576.87 nm. The obvious blue shift is attributed to the stress release and high current density injection. Moreover, the output power density is very similar for smaller chip micro-LEDs at the same injection current density. This behavior is different from AlGaInP micro-LEDs. The sidewall defect is more easily repaired by passivation, which is similar to the behavior of blue micro-LEDs. The results indicate that the red InGaN epilayer structure provides an opportunity to realize the full color LEDs fabricated by GaN-based LEDs.

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