Growth mechanism for solid‐phase epitaxy of Si in the Si 〈100〉/Pd2Si/Si(amorphous) system studied by a radioactive tracer technique
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1965 ◽
Vol 16
(4)
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pp. 261-264
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1984 ◽
Vol 16
(10-11)
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pp. 91-106
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2014 ◽
Vol 46
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pp. 93-100
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1957 ◽
Vol 2
(3-4)
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pp. 229-230