Elastic wave amplitudes in shock-compressed thin polycrystalline aluminum samples

2009 ◽  
Vol 106 (7) ◽  
pp. 073508 ◽  
Author(s):  
J. M. Winey ◽  
B. M. LaLone ◽  
P. B. Trivedi ◽  
Y. M. Gupta
Keyword(s):  
Elastic Wave ◽  
Polycrystalline Aluminum ◽  
Thin Polycrystalline

Properties and Fracture Resistance of Thin Polycrystalline Aluminum Films on Sapphire Substrates

1995 ◽  
Vol 403 ◽  
Author(s):  
N. R. Moody ◽  
D. Medlin ◽  
S. Guthrie ◽  
R. Q. Hwang ◽  
K. F. McCarty
Keyword(s):  
Polycrystalline Aluminum ◽  
Plastic Properties ◽  
Aluminum Films ◽  
Sapphire Substrates ◽  
Nominal Thickness ◽  
High Resolution Tem ◽  
Interface Hardness ◽  
Thin Polycrystalline ◽  
Film Substrate ◽  
Single Crystal Sapphire

AbstractWe employed nanoindentation, continuous microscratch testing, and high resolution TEM to determine the effect of structure on the properties and resistance to fracture of thin polycrystalline aluminum films deposited onto single crystal sapphire substrates at 25°C and 250°C. These films had a nominal thickness of 90 nm and a grain size of 160 nm. The elastic and plastic properties were similar for both films. The elastic moduli superimposed, increasing from bulk aluminum values at the surface to sapphire values at the interface. Hardness values also superimposed, but were constant through the film thickness at a value between aluminum and sapphire. In contrast, susceptibility to fracture varied markedly between the films with the 25°C film exhibiting abrupt failure along the film-substrate interface while the 250'C film gave no indication of fracture in the film, along the interface, or in the substrate under the conditions tested.

Electromigration Damage Studied by 1/f Noise

1996 ◽  
Vol 428 ◽  
Author(s):  
K. Dagge
Keyword(s):  
High Resolution ◽  
Spectral Density ◽  
Nucleation And Growth ◽  
Polycrystalline Aluminum ◽  
Noise Component ◽  
Aluminum Films ◽  
Before And After ◽  
Noise Measurements ◽  
Thin Polycrystalline ◽  
Dc Stress

AbstractThin polycrystalline aluminum films were investigated by high-resolution ac noisemeasurements before and after damaging by high direct current. Immediately after the interruption of the dc-stress a transient noise component was observed that was inversely proportional to the square of the frequency f (1/f2 -noise). It was caused by discrete jumps in the resistance presumably due to the relaxation of mechanical stress. The second component of noise was stable and in all cases approximately proportional to 1/f. The spectral density of 1/f-noise showed characteristic discrete steps as a function of damaging time, in contrast to the resistance which increased almost continuously up to the failure of the film. This indicates that nucleation-and-growth processes of mobile defects were observed in the noise measurements. Thus noise measurements might help to understand the microscopic process of electromigration.

scholarly journals Сглаживание тонких поликристаллических пленок AlN кластерными ионами аргона

2021 ◽  
Vol 47 (6) ◽  
pp. 44
Author(s):  
И.В. Николаев ◽  
Н.Г. Коробейщиков ◽  
М.А. Роенко ◽  
П.В. Гейдт ◽  
В.И. Струнин
Keyword(s):  
Aluminum Nitride ◽  
Ion Beam ◽  
Low Energy ◽  
Cluster Ions ◽  
Polycrystalline Aluminum ◽  
Etching Depth ◽  
Spatial Frequencies ◽  
Wide Range ◽  
Cluster Ion ◽  
Thin Polycrystalline

The possibility of surface modification of thin polycrystalline aluminum nitride films by bombardment with argon cluster ion beam is investigated. The processing was carried out with high- (105 eV/atom) and low-energy (10 eV/atom) cluster ions. Using the spectral function of roughness, a highly efficient smoothing of the surface of nanostructured thin films of aluminum nitride was demonstrated in a wide range of spatial frequencies (ν = 0.02–128 μm-1) and at small etching depth (<100 nm).

scholarly journals Influence of synthesis parameters and thermal annealing on grain size of polycrystalline aluminum thin film

2021 ◽  
Vol 2119 (1) ◽  
pp. 012121
Author(s):  
I E Merkulova
Keyword(s):  
Grain Size ◽  
Thermal Annealing ◽  
Xrd Analysis ◽  
Synthesis Temperature ◽  
Sem Images ◽  
Polycrystalline Aluminum ◽  
Plasma Sputtering ◽  
Average Grain Size ◽  
Before And After ◽  
Thin Polycrystalline

Abstract The thin polycrystalline aluminium films were synthesized on monocrystalline silicon substrates by ion-plasma sputtering. The synthesis was carried out at temperatures of 80 and 160°C and deposition rate of 10 and 110 nm/min. As-deposited films were annealed for 15 h at 550°C. The morphology of aluminium films before and after annealing was obtained using SEM images. The surfaces of as-deposited Al thin films, synthesized at high temperature, were uneven, while for low temperature films they were smooth enough with Al hillocks on the top of the film. After thermal annealing, morphology of the films was changed slightly. XRD patterns were obtained to calculate the average Al grain size of as-deposited and annealed films. The XRD analysis showed that an increase in the synthesis temperature leads to an increase in the average grain size from 50 to 84 nm and that increase in the rate of Al film synthesis leads to an increase in the average grain size from 50 to 63 nm. As the result of annealing, the average grain size increased for all samples and the final meaning was from 78 to 140 nm.

Transient creep in free-standing thin polycrystalline aluminum films

2002 ◽  
Vol 92 (9) ◽  
pp. 4968-4975 ◽  
Author(s):  
A. J. Kalkman ◽  
A. H. Verbruggen ◽  
G. C. A. M. Janssen ◽  
S. Radelaar
Keyword(s):  
Transient Creep ◽  
Free Standing ◽  
Polycrystalline Aluminum ◽  
Aluminum Films ◽  
Thin Polycrystalline

Transmission Electron Microscopy Studies of Aluminum Oxidation

1985 ◽  
Vol 43 ◽  
pp. 268-269
Author(s):  
J.Y. Lee
Keyword(s):  
Nucleation And Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Polycrystalline Aluminum ◽  
Axis Orientation ◽  
Temperature Oxidation ◽  
Aluminum Oxidation ◽  
Transmission Electron ◽  
High Resolution Images ◽  
Argon Ion

In the oxidation of metals and alloys, microstructural features at the atomic level play an important role in the nucleation and growth of the oxide, but little is known about the atomic mechanisms of high temperature oxidation. The present paper describes current progress on crystallographic aspects of aluminum oxidation. The 99.999% pure, polycrystalline aluminum was chemically polished and oxidized in 1 atm air at either 550°C or 600°C for times from 0.5 hr to 4 weeks. Cross-sectional specimens were prepared by forming a sandwich with epoxy, followed by mechanical polishing and then argon ion milling. High resolution images were recorded in a <110>oxide zone-axis orientation with a JE0L JEM 200CX microscope operated at 200 keV.

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