Facet formation during solid phase epitaxy regrowth: A lattice kinetic Monte Carlo model

2009 ◽  
Vol 95 (12) ◽  
pp. 123123 ◽  
Author(s):  
Ignacio Martin-Bragado ◽  
Victor Moroz
Keyword(s):  
Monte Carlo ◽  
Solid Phase ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Model ◽  
Solid Phase Epitaxy ◽  
Facet Formation

A Comprehensive Atomistic Kinetic Monte Carlo Model for Amorphization/Recrystallization and its Effects on Dopants

2008 ◽  
Vol 1070 ◽  
Author(s):  
Nikolas Zographos ◽  
Ignacio Martin-Bragado
Keyword(s):  
Activation Energy ◽  
Monte Carlo ◽  
Point Defects ◽  
Dopant Concentration ◽  
Solid Phase ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Model ◽  
Atomistic Model ◽  
Recrystallization Front ◽  
Dopant Redistribution

ABSTRACTThis work shows a comprehensive atomistic model to describe amorphization and recrystallization, and its different effects on dopants in silicon. We begin by describing the physical basis of the model used, based on the transformation of ion-implanted dopants and generated point defects into amorphous pockets of different sizes. The growth and dissolution of amorphous pockets is simulated by the capture and recombination of point defects with different activation energies. In some cases, this growth leads to the formation of amorphous layers. These layers, composed of a set of amorphous elements, have an activation energy to be recrystallized. The recrystallization velocity is modeled not only depending on temperature, but also on dopant concentration. During the recrystallization, dopants move with the recrystallization front to simulate the dopant redistribution during solid phase epitaxial regrowth (SPER). At the edge of the amorphous-crystalline interface, the remaining damage forms end-of-range (EOR) defects.Once the model is explained, we discuss the calibration methodology used to reproduce several amorphous/crystalline (A/C) experiments, including the dependencies of the A/C transition temperature on dose rate and ion mass, and the A/C depth on ion implant energy.This calibrated model allows us to explore the redistribution of several dopants, including B, As, F, and In, during SPER. Experimental results for all these dopants are compared with relevant simulations.

Amorphous‐Si/crystalline‐Si facet formation during Si solid‐phase epitaxy near Si/SiO2 boundary

1984 ◽  
Vol 56 (2) ◽  
pp. 279-285 ◽  
Author(s):  
Yasuo Kunii ◽  
Michiharu Tabe ◽  
Kenji Kajiyama
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Facet Formation

Kinetic Monte Carlo model for the COVID-19 epidemic: Impact of mobility restriction on a COVID-19 outbreak

2020 ◽  
Vol 102 (3) ◽  
Author(s):  
Leonardo Evaristo de Sousa ◽  
Pedro Henrique de Oliveira Neto ◽  
Demetrio Antônio da Silva Filho
Keyword(s):  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Model

scholarly journals A new methodology to calculate process rates in a kinetic Monte Carlo model of PAH growth

2019 ◽  
Vol 209 ◽  
pp. 133-143 ◽  
Author(s):  
Gustavo Leon ◽  
Nick Eaves ◽  
Jethro Akroyd ◽  
Sebastian Mosbach ◽  
Markus Kraft
Keyword(s):  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Model

An all-atom kinetic Monte Carlo model for chemical vapor deposition growth of graphene on Cu(1 1 1) substrate

2020 ◽  
Vol 32 (15) ◽  
pp. 155401 ◽  
Author(s):  
Shuai Chen ◽  
Junfeng Gao ◽  
Bharathi M Srinivasan ◽  
Gang Zhang ◽  
Viacheslav Sorkin ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Model ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth

Electroplating of Through Silicon Vias: A Kinetic Monte Carlo Model

2019 ◽  
Author(s):  
Lai MingRui ◽  
Ramanarayan Hariharaputran ◽  
Khoong Hong Khoo ◽  
Jin Hongmei ◽  
Shunnian Wu ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Model ◽  
Through Silicon Vias ◽  
Silicon Vias

scholarly journals Radiation-induced segregation in W-Re: from kinetic Monte Carlo simulations to atom probe tomography experiments

2019 ◽  
Vol 92 (10) ◽  
Author(s):  
Matthew J. Lloyd ◽  
Robert G. Abernethy ◽  
David E. J. Armstrong ◽  
Paul A. J. Bagot ◽  
Michael P. Moody ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Atom Probe Tomography ◽  
Ion Irradiation ◽  
Kinetic Monte Carlo ◽  
Cluster Formation ◽  
Monte Carlo Model ◽  
Atom Probe ◽  
Solubility Limit ◽  
Radiation Induced ◽  
Kinetic Monte Carlo Simulations

Abstract A viable fusion power station is reliant on the development of plasma facing materials that can withstand the combined effects of high temperature operation and high neutron doses. In this study we focus on W, the most promising candidate material. Re is the primary transmutation product and has been shown to induce embrittlement through cluster formation and precipitation below its predicted solubility limit in W. We investigate the mechanism behind this using a kinetic Monte Carlo model, implemented into Stochastic Parallel PARticle Kinetic Simulator (SPPARKS) code and parameterised with a pairwise energy model for both interstitial and vacancy type defects. By introducing point defect sinks into our simulation cell, we observe the formation of Re rich clusters which have a concentration similar to that observed in ion irradiation experiments. We also compliment our computational work with atom probe tomography (APT) of ion implanted, model W-Re alloys. The segregation of Re to grain boundaries is observed in both our APT and KMC simulations. Graphical abstract

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