Deep‐level changes associated with the degradation of gallium phosphide red‐light‐emitting diodes

1976 ◽  
Vol 47 (9) ◽  
pp. 4067-4072 ◽  
Author(s):  
C. H. Henry ◽  
P. Daniel Dapkus
Keyword(s):  
Gallium Phosphide ◽  
Light Emitting Diodes ◽  
Deep Level ◽  
Red Light ◽  
Light Emitting

scholarly journals Understanding the luminescent nature of organic radicals for efficient doublet emitters and pure-red light-emitting diodes

2020 ◽  
Vol 19 (11) ◽  
pp. 1224-1229 ◽  
Author(s):  
Alim Abdurahman ◽  
Timothy J. H. Hele ◽  
Qinying Gu ◽  
Jiangbin Zhang ◽  
Qiming Peng ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Red Light ◽  
Organic Radicals ◽  
Light Emitting

Synthesis and Characterization of Thieno[3,4-b]pyrazine Materials for Solution-processible Organic Red Light-emitting Diodes

2011 ◽  
Vol 40 (4) ◽  
pp. 417-419 ◽  
Author(s):  
Qing Li ◽  
Jiuyan Li ◽  
Lijun Deng ◽  
Qian Wang ◽  
Zhanxian Gao ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Red Light ◽  
Synthesis And Characterization ◽  
Light Emitting

(K0.5Na0.5)NbO3:Eu3+/Bi3+: a novel, highly efficient, red light-emitting material with superior water resistance behavior

RSC Advances ◽  
2015 ◽  
Vol 5 (6) ◽  
pp. 4707-4715 ◽  
Author(s):  
Qiwei Zhang ◽  
Haiqin Sun ◽  
Tao Kuang ◽  
Ruiguang Xing ◽  
Xihong Hao
Keyword(s):  
Blue Light ◽  
White Light ◽  
High Performance ◽  
Water Resistance ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Light Emitting ◽  
Highly Efficient ◽  
White Light Emitting Diodes

Materials emitting red light (∼611 nm) under excitation with blue light (440–470 nm) are highly desired for fabricating high-performance white light-emitting diodes (LEDs).

Electrical Measurement of Recombination Lifetime in Blue Light Emitting Diodes

2004 ◽  
Vol 829 ◽  
Author(s):  
M. A. Awaah ◽  
R. Nana ◽  
K. Das
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Deep Level ◽  
Electrical Measurement ◽  
High Concentration ◽  
Recombination Lifetime ◽  
Light Emitting ◽  
Radiative Processes ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTA recombination lifetime of approximately 25 ns was extracted from measured reverse recovery storage times in AlGaN/GaN/AlGaN double heterojunction blue light emitting diodes. This experimentally determined lifetime is expected to arise from a combination of radiative and non-radiative processes occurring in the diodes. The non-radiative processes are likely to be due the presence of a high concentration deep-states as identified from the current-voltage and capacitance-voltage measurements. Current-voltage characteristics of these diodes were highly non-ideal as indicated by high values of the ideality factor ranging from 3.0 – 7.0. Logarithmic plots of the forward characteristics indicated a space-charge-limited-current (SCLC) conduction in presence of a high density of “deep-level states” in the active region of the diodes. An analysis of these characteristics yielded an approximate density of these deep-level states as 2 × 1017/cm3. The density of deep-states extracted from capacitance-voltage measurements were in good agreement with that obtained from current-voltage measurements.

Effect of deep-level states on current-voltage characteristics and electroluminescence of blue and UV light-emitting diodes

2010 ◽  
Vol 207 (6) ◽  
pp. 1489-1496 ◽  
Author(s):  
R. Nana ◽  
P. Gnanachchelvi ◽  
M. A. Awaah ◽  
M. H. Gowda ◽  
A. M. Kamto ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Deep Level ◽  
Uv Light ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals (Y,Gd)BO3:Eu red phosphor for dual-layer phosphor structure to enhance the optical performance of white light-emitting diodes

2021 ◽  
Vol 10 (4) ◽  
pp. 1930-1935
Author(s):  
Phan Xuan Le ◽  
Le Hung Tien
Keyword(s):  
White Light ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Phosphor Layer ◽  
Light Emitting ◽  
Conformal Coating ◽  
Color Quality ◽  
Remote Phosphor ◽  
White Light Emitting Diodes ◽  
Color Rendering

Among the structures using for fabricating white light-emitting diodes (WLEDs) such as the conformal coating or in-cup geometries, the remote phosphor structure gives the highest luminous efficacy. However, in terms of color quality, its performance is not as good as the others. The red-light compensation has been reported as the effective solution for enhancing the color quality of WLEDs. Hence, this study adopted the idea and applied to the dual-layer phosphor structure. The phosphor used to boost the red color in light formation is (Y,Gd)BO3:Eu particle. The dual-layer remote phosphor structure was simulated with the red (Y,Gd)BO3:Eu phosphor layer above the original yellow phosphor YAG:Ce3+ one. The WLEDs with different correlated color temperatures of 5600 K, 6600 K and 7700K were experimented. Mie-theory and Lambert-Beer law were applied to examine the results. The growth in color rendering index (CRI) and color quality scale (CQS) with the increase of (Y,Gd)BO3:Eu phosphor concentration was observed. Nevertheless, the lumen efficacy would be degraded if the concentration was over a certain number. The information provided in this article is useful for the development of high-power WLED production with greater color quality.

scholarly journals Yellow-red light-emitting diodes using periodic Ga-flow interruption during deposition of InGaN well

2017 ◽  
Vol 25 (13) ◽  
pp. 15152 ◽  
Author(s):  
Kwanjae Lee ◽  
Hamin Lee ◽  
Cheul-Ro Lee ◽  
Tae-Hoon Chung ◽  
Yoon Seok Kim ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Red Light ◽  
Light Emitting ◽  
Flow Interruption
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