Acoustic harmonic generation in piezoelectric semiconductors with energy‐dependent relaxation times

1976 ◽  
Vol 47 (8) ◽  
pp. 3569-3572 ◽  
Author(s):  
S. P. Singh ◽  
S. K. Sharma
Keyword(s):  
Harmonic Generation ◽  
Relaxation Times ◽  
Piezoelectric Semiconductors ◽  
Energy Dependent

Ultrasonic Harmonic Generation in Piezoelectric Semiconductors

1972 ◽  
Vol 43 (7) ◽  
pp. 2937-2944 ◽  
Author(s):  
Chhi‐Chong Wu ◽  
Harold N. Spector
Keyword(s):  
Harmonic Generation ◽  
Piezoelectric Semiconductors

Energy-Dependent Relaxation Times in Electroacoustic Absorption

1970 ◽  
Vol 1 (2) ◽  
pp. 697-704 ◽  
Author(s):  
Carlo Jacoboni ◽  
E. W. Prohofsky
Keyword(s):  
Relaxation Times ◽  
Energy Dependent

A Semi-Analytical Interpretation of Transient Electron Transport in Gallium Nitride, Indium Nitride, and Aluminum Nitride

1998 ◽  
Vol 512 ◽  
Author(s):  
B. E. Foutz ◽  
S. K. O'Leary ◽  
M. S. Shur ◽  
L. F. Eastman
Keyword(s):  
Monte Carlo ◽  
Gallium Nitride ◽  
Electric Field ◽  
Aluminum Nitride ◽  
Monte Carlo Simulations ◽  
Field Effect Transistors ◽  
Indium Nitride ◽  
Relaxation Times ◽  
Transient Effects ◽  
Energy Dependent

ABSTRACTThe energy dependent momentum and energy relaxation times, and the effective single valley energy dependent effective mass, are extracted from Monte Carlo simulations of gallium nitride, indium nitride, and aluminum nitride. A simple semi-analytical energy model, which uses these dependencies, is in good agreement with the results of transient Monte Carlo simulations. Both the Monte Carlo and the semi-analytical simulations show that the overshoot effects are most pronounced when the electric field abruptly changes from a value below a critical field to one above. This is attributed to the relatively large difference between the effective energy and momentum relaxation times for such a variation of electric field. Our calculations indicate that gallium nitride and indium nitride should have the most pronounced transient effects. A calculation of the transit times as a function of the gate length shows that an upper bound for the maximum expected cut-off frequencies are 260 GHz and 440 GHz for 0.2 μm gallium nitride and indium nitride field effect transistors, respectively.

Sign in / Sign up

Export Citation Format

Share Document