Electrical properties of platinum in silicon as determined by deep‐level transient spectroscopy

1976 ◽  
Vol 47 (7) ◽  
pp. 3172-3176 ◽  
Author(s):  
A. O. Evwaraye ◽  
Edmund Sun
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy

scholarly journals Impact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 279-284 ◽  
Author(s):  
O.F. Vyvenko ◽  
N.V. Bazlov ◽  
M.V. Trushin ◽  
A.A. Nadolinski ◽  
Michael Seibt ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Hydrogen ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Extended Defects ◽  
Transient Spectroscopy ◽  
P Type ◽  
Plasma Hydrogenation ◽  
Type Sample

Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as “band-like” or “localized”. In both n- and p-type samples DLTS-peak in the initial as quenched samples showed bandlike behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial “band-like” behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20µm.

scholarly journals Structural and Electrical Properties of Beryllium Implanted Silicon Carbide

1999 ◽  
Vol 572 ◽  
Author(s):  
T. Henkel ◽  
Y. Tanaka ◽  
N. Kobayashi ◽  
H. Tanoue ◽  
M. Gong ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Deep Level ◽  
Surface Region ◽  
Structural And Electrical Properties ◽  
Transient Spectroscopy ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTStructural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500 °C and 1700 °C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450 °C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy.

Electrical Properties of Clustered and Precipitated Iron in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 109-114
Author(s):  
R. Khalil ◽  
Vitaly V. Kveder ◽  
Wolfgang Schröter ◽  
Michael Seibt
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Iron Silicide ◽  
Electronic States ◽  
Moderate Temperature ◽  
Extended Defects ◽  
Characteristic Features ◽  
Transient Spectroscopy ◽  
The Stability

Deep electronic states associated with iron silicide precipitates have been studied by means of deep-level transient spectroscopy. The observed spectra show the characteristic features of bandlike states at extended defects. From the stability of the states on annealing at moderate temperature they are tentatively attributed to precipitate-matrix interfaces.

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States

2010 ◽  
Vol 645-648 ◽  
pp. 499-502 ◽  
Author(s):  
Alberto F. Basile ◽  
John Rozen ◽  
X.D. Chen ◽  
Sarit Dhar ◽  
John R. Williams ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Capture Cross ◽  
Temperature Dependent ◽  
Band Energy ◽  
Transient Spectroscopy ◽  
Semiconductor Traps

The electrical properties of the SiC/SiO2 interface resulting from oxidation of the n-type 6H-SiC polytype were studied by hi-lo CV, temperature dependent CV and constant capacitance deep level transient spectroscopy (CCDLTS) techniques. Several trap species differing in energy and capture cross section were identified. A trap distribution at 0.5 eV below the 6H-SiC conduction band energy and a shallower density of states in both the 6H and 4H polytyes are passivated by post-oxidation NO annealing. However, other ultra-shallow and deeper defect distributions remain after nitridation. The latter may originate from semiconductor traps.

Grain Boundary Dopant and Heat Treatment Effects on the Electrical Properties of Polycrystalline ZnO

1995 ◽  
Vol 411 ◽  
Author(s):  
T. D. Chen ◽  
J.-R. Lee ◽  
H. L. Tuller ◽  
Y.-M. Chiang
Keyword(s):  
Heat Treatment ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Low Leakage ◽  
Current Voltage ◽  
Transient Spectroscopy

ABSTRACTSimplified varistor systems of bismuth- and cobalt-doped zinc oxide are studied. A prior study has shown that the distributions of bismuth segregation at the grain boundaries in such samples can be controlled by varying microstructure and heat treatment. Current-voltage and deep level transient spectroscopy measurements were done to evaluate the corresponding electrical properties. Low leakage and α values of ˜30 were attained, despite the nominal, twocomponent doping of these simplified varistors. Moreover, these samples show the signature defects that are found in many multi-dopant, commercial devices: two shallow bulk traps at ˜0.14 eV and ˜0.24 eV and one prominent interfacial trap at ˜1 eV.

Properties of Cu in GaAs

1990 ◽  
Vol 209 ◽  
Author(s):  
Rosa Leon ◽  
Maria Kaminska ◽  
Kin Man Yu ◽  
Eicke Weber
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Copper Concentration ◽  
Deep Level ◽  
Optical Measurements ◽  
X Ray ◽  
Total Copper ◽  
Hall Effect Measurements ◽  
Transient Spectroscopy ◽  
Comprehensive Study

ABSTRACT:The electrical properties and preferred lattice sites of Cu in GaAs were studied combining electrical and optical measurements with Particle Induced X-ray Emission (PIXE) and Channeling. For electronic characterization, Deep Level Transient Spectroscopy (DLTS), Hall Effect measurements, and Photoluminescence (PL) were used. From this comprehensive study it was determined that Cu introduces two levels in the bandgap, that the concentration of electrically active copper is considerably smaller than the total copper concentration, and that most of the Cu in GaAs is not of purely substitutional character.

Deep levels in the MBE ZnO:As/n-GaN diodes – Photoluminescence, electrical properties and deep level transient spectroscopy

2018 ◽  
Vol 742 ◽  
pp. 296-303 ◽  
Author(s):  
E. Zielony ◽  
E. Przezdziecka ◽  
E. Placzek-Popko ◽  
W. Lisowski ◽  
M. Stachowicz ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

Electrical Properties of Iron-Related Defects in Cz- And Fz-Grown N-Type Silicon

1998 ◽  
Vol 510 ◽  
Author(s):  
Hajime Kitagawa ◽  
Shuji Tanaka
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Isothermal Annealing ◽  
Emission Rate ◽  
Deep Level ◽  
Silicon Crystal ◽  
Annealing Process ◽  
Enthalpy And Entropy ◽  
Transient Spectroscopy ◽  
First Time

AbstractElectrical properties of iron-related defects (IRD) introduced in n-type floating zoned (FZ) and Czochralski (CZ)-grown silicon are studied by deep level transient spectroscopy and Hall effect. Electrically active IRD have been observed for the first time in n-type CZ silicon. Enthalpy and entropy factors of electron emission rate of IRD are equivalent between those observed in CZ and FZ silicon. In-diffusion process at 1160° and isothermal annealing process at 150° also indicate the identical nature of IRD between CZ and FZ silicon, which can be understood in terms of the consecutive progress of iron-related complex-formation reactions including interstitial iron atoms (Fei) in the silicon crystal. The IRD is independent of oxygen and phosphorus atoms. Only a small fraction of Fei forms electrically ionizable complexes

Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC

2015 ◽  
Vol 821-823 ◽  
pp. 347-350 ◽  
Author(s):  
Tomasz Sledziewski ◽  
Gunter Ellrott ◽  
W. Rösch ◽  
Heiko B. Weber ◽  
Michael Krieger
Keyword(s):  
Electrical Properties ◽  
Point Defects ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

We have investigated the electrical properties of germanium-implanted n-type 4H-SiC epitaxial layers. Deep level transient spectroscopy (DLTS) was employed in order to study the influence of germanium ions on implantation-induced point defects. In particular, we observe a decrease of the concentration of Z1/2defect with increasing dose of implanted germanium.

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