Photoconductivity of amorphous compound semiconductors involving elements from groups IV, V, and VI

1976 ◽  
Vol 47 (5) ◽  
pp. 2005-2014 ◽  
Author(s):  
Ralph T.‐S. Shiah ◽  
Richard H. Bube
Keyword(s):  
Compound Semiconductors ◽  
Amorphous Compound

Thermoelectric power of amorphous compound semiconductors

1977 ◽  
Vol 24 (3) ◽  
pp. 377-398 ◽  
Author(s):  
Hubert A. Vander Plas ◽  
Richard H. Bube
Keyword(s):  
Thermoelectric Power ◽  
Compound Semiconductors ◽  
Amorphous Compound

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

More Se Vacancies in Sb 2 Se 3 under Se‐Rich Conditions: An Abnormal Behavior Induced by Defect‐Correlation in Compensated Compound Semiconductors

Small ◽  
2021 ◽  
pp. 2102429
Author(s):  
Menglin Huang ◽  
Zenghua Cai ◽  
Shanshan Wang ◽  
Xin‐Gao Gong ◽  
Su‐Huai Wei ◽  
...  
Keyword(s):  
Compound Semiconductors ◽  
Abnormal Behavior

Characterisation of molecular nitrogen in ion-bombarded compound semiconductors by synchrotron-based absorption and emission spectroscopies

Vacuum ◽  
2009 ◽  
Vol 84 (1) ◽  
pp. 37-40 ◽  
Author(s):  
A. Bozanic ◽  
Z. Majlinger ◽  
M. Petravic ◽  
Q. Gao ◽  
D. Llewellyn ◽  
...  
Keyword(s):  
Molecular Nitrogen ◽  
Compound Semiconductors ◽  
Absorption And Emission

A Standards-Based Method to Determine Elemental Compositions using Energy Dispersive X-Ray Spectrometry for Compound Semiconductors

2012 ◽  
Vol 18 (S2) ◽  
pp. 1046-1047 ◽  
Author(s):  
M. Rathi ◽  
P. Ahrenkiel ◽  
J. Carapella ◽  
M. Wanlass
Keyword(s):  
Compound Semiconductors ◽  
Energy Dispersive ◽  
X Ray ◽  
Elemental Compositions

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Sign in / Sign up

Export Citation Format

Share Document