Quantum efficiency of the internal photoelectric effect in silicon and germanium

1976 ◽  
Vol 47 (2) ◽  
pp. 689-695 ◽  
Author(s):  
Ove Christensen
2007 ◽  
Vol 17 (03) ◽  
pp. 571-576
Author(s):  
A. GLADUN ◽  
V. LEIMAN ◽  
A. ARSENIN ◽  
O. MANNOUN ◽  
V. TARAKANOV

We present numerical investigation of anomalous internal photoelectric effect which is realized in thin film (< 100 nm) structures by surface plasmon (SP) excitation and its interaction with primary laser radiation. SP electric field gain and electron temperature in the SP field have been calculated.


2010 ◽  
Vol 52 (6) ◽  
pp. 1303-1307 ◽  
Author(s):  
N. A. Davidenko ◽  
S. V. Dekhtyarenko ◽  
V. N. Kokozay ◽  
A. V. Kozinetz ◽  
O. V. Nesterova ◽  
...  

1973 ◽  
Vol 28 (5) ◽  
pp. 588-600 ◽  
Author(s):  
G. Hildebrandt ◽  
J. D. Stephenson ◽  
H. Wagenfeld

A brief discussion of G. Molière's generalized dynamical theory is given with respect to the interpretation of the experimental data|χ⊥ig/χi0 |obtained by means of the Borrmann effect. In order to compare theory and experiment photoelectric absorption cross sections for Silicon and Germanium have been calculated over the X-ray energy range from 5 to 25 keV. Linear absorption coefficients measured by us and other authors agree with theory within a few per cent. Taking the Debye-Waller factor into account, the same theoretical data have been used to calculate |χ⊥ig/χi0 | for Ge and Si. The agreement with extensive measurements of the Borrmann effect in Ge is very good in most cases. The experiments presented in this paper confirm the existence of the electric quadrupole transitions within the photoelectric effect.


2015 ◽  
Vol 27 (2) ◽  
pp. 24118
Author(s):  
席锋 Xi Feng ◽  
胡莉 Hu Li ◽  
张翠玲 Zhang Cuiling

2020 ◽  
Vol 55 (5) ◽  
pp. 055011
Author(s):  
Giuseppe Schirripa Spagnolo ◽  
Adriana Postiglione ◽  
Ilaria De Angelis

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