Artificial molecular quantum rings under magnetic field influence

2009 ◽  
Vol 106 (7) ◽  
pp. 073702 ◽  
Author(s):  
L. K. Castelano ◽  
G.-Q. Hai ◽  
B. Partoens ◽  
F. M. Peeters
2011 ◽  
Vol 1370 ◽  
Author(s):  
I. Filikhin ◽  
S. Matinyan ◽  
J. Nimmo ◽  
B. Vlahovic

ABSTRACTSemiconductor heterostructures as quantum dots or quantum rings (QR) demonstrate discrete atom-like energy level structure. In an atom the position of an electron can be changed by electromagnetic field influence with accompaniment of quantum number change. In present work we show that in the weak coupled Double Concentric Quantum Ring (DCQR), the electron jumping is possible due to tunneling accompanied with level anti-crossing which has a place in a magnetic field. We study DCQR composed of GaAs in an Al0.70Ga0.30As substrate under influence of a magnetic field. In our model the DCQR is considered within three dimensional single sub-band effective mass approach. When a magnetic field is applied in the z direction, perpendicular to the DCQR plane. The results of the numerical calculations for DCQR are presented for DCQRs of different geometry.


2019 ◽  
Vol 11 (5) ◽  
pp. 05013-1-05013-5
Author(s):  
V. Ye. Marchuk ◽  
◽  
M. V. Kindrachuk ◽  
V. I. Mirnenko ◽  
R. G. Mnatsakanov ◽  
...  

2008 ◽  
Author(s):  
Amange F. Boya ◽  
Abdulghafoor I. Abdullah

2010 ◽  
Vol 7 (11-12) ◽  
pp. 2608-2611 ◽  
Author(s):  
José Maria Escartin ◽  
Francesc Malet ◽  
Marti Pi ◽  
Manuel Barranco

2014 ◽  
Vol 31 (86(3/2014)) ◽  
pp. 425-432 ◽  
Author(s):  
Łukasz Pleskacz ◽  
Elżbieta Fornalik-Wajs ◽  
Aleksandra Roszko

2014 ◽  
Vol 11 (5-6) ◽  
pp. 986-988
Author(s):  
A. Chizhik ◽  
M. Ipatov ◽  
A. Stupakiewicz ◽  
A. Zhukov ◽  
A. Maziewski ◽  
...  

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