Buried optical waveguides in fused silica by high−energy oxygen ion implantation

1975 ◽  
Vol 46 (2) ◽  
pp. 955-957 ◽  
Author(s):  
E. V. K. Rao ◽  
D. Moutonnet
Keyword(s):  
Ion Implantation ◽  
Optical Waveguides ◽  
High Energy ◽  
Fused Silica ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

Planar optical waveguides in β-BaB2O4 produced by oxygen ion implantation at low doses

2004 ◽  
Vol 85 (9) ◽  
pp. 1457-1459 ◽  
Author(s):  
Xue-Lin Wang ◽  
Feng Chen ◽  
Ke-Ming Wang ◽  
Qing-Ming Lu ◽  
Ding-Yu Shen ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Optical Waveguides ◽  
Low Doses ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation ◽  
Planar Optical Waveguides

In situ X-ray diffraction investigations during high-energy oxygen ion implantation in transition metals

Vacuum ◽  
2004 ◽  
Vol 76 (2-3) ◽  
pp. 281-285 ◽  
Author(s):  
Y. Bohne ◽  
N. Shevchenko ◽  
F. Prokert ◽  
J. von Borany ◽  
B. Rauschenbach ◽  
...  
Keyword(s):  
Transition Metals ◽  
Ion Implantation ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

Characterization of optical waveguides in YbVO_4 crystals formed by 30 MeV oxygen ion implantation

2008 ◽  
Vol 47 (8) ◽  
pp. 1117 ◽  
Author(s):  
Chuan-Lei Jia ◽  
Yi Jiang ◽  
Lei Wang ◽  
Xue-Lin Wang ◽  
Ke-Ming Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Optical Waveguides ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Improved surface corrosion resistance of WE43 magnesium alloy by dual titanium and oxygen ion implantation

2013 ◽  
Vol 529 ◽  
pp. 407-411 ◽  
Author(s):  
Ying Zhao ◽  
Guosong Wu ◽  
Qiuyuan Lu ◽  
Jun Wu ◽  
Ruizhen Xu ◽  
...  
Keyword(s):  
Corrosion Resistance ◽  
Magnesium Alloy ◽  
Ion Implantation ◽  
Surface Corrosion ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation ◽  
We43 Magnesium Alloy

Microstructural and Compositional Characterization of SiC-On-Insulator Structures

1999 ◽  
Vol 5 (S2) ◽  
pp. 770-771
Author(s):  
Manabu Ishimaru ◽  
Robert M. Dickerson ◽  
Kurt E. Sickafus
Keyword(s):  
Ion Implantation ◽  
Integrated Circuit ◽  
High Speed ◽  
Scanning Transmission Electron Microscope ◽  
Oxygen Ions ◽  
Oxygen Ion ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Oxygen Ion Implantation

As the size of Si integrated circuit structures is continually reduced, interest in semiconductor-oninsulator (SOI) structures has heightened. SOI structures have already been developed for Si using oxygen ion implantation. However, the application of Si devices is limited due to the physical properties of Si. As an alternative to Si, SiC is a potentially important semiconductor for high-power, high-speed, and high-temperature electronic devices. Therefore, this material is a candidate for expanding the capabilities of Si-based technology. In this study, we performed oxygen ion implantation into bulk SiC to produce SiC-on-insulator structures. We examined the microstructures and compositional distributions in implanted specimens using transmission electron microscopy and a scanning transmission electron microscope equipped with an energy-dispersive X-ray spectrometer (STEM-EDX).Figures 1(a) and 2(a) show bright-field images of 6H-SiC implanted with 180 keV oxygen ions at 650 °C to fluences of 7xl017 and 1.4xl018 cm−2, respectively. Three regions with distinct image contrast are apparent in Figs. 1(a) and 2(a), as indicated by A, B, and C.

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